Apart from delivering very high output powers, GaN can also be used to realize robust receiver components, such as Low Noise Amplifiersand Switches. This paper presents the designand measurement results of two GaN X-band switch and LNA MMICs, designed for integration in a radar front end. The switch design shows a 1 dB compression point of 43 dBm and can withstand input powers of over 46 dBm. The LNA design shows an input power handling capability of 41 dBm. These results demonstrate the capability of realizing robust receivers with GaN, far beyond what is currently possible using GaAs
This work presents MMIC low-noise amplifiers based an AlGaN/GaN HEMT technology on SiC substrate for...
Abstract—The high power capabilities in combination with the low noise performance of Gallium Nitrid...
This paper presents a low-noise amplifier (LNA) operating between 8-11 GHz. Measurement results show...
Abstract – Apart from delivering very high output powers, GaN can also be used to realize robust rec...
Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs,...
Gallium-Nitride technology is known for its high power density and power amplifier designs, but is a...
In this contribution, a set of robust GaN MMIC T/R switches and low-noise amplifiers, all based on t...
This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be...
In space applications, due to the large number of sources of interferences, RF receivers have to be ...
The high power capabilities in combination with the low noise performance of Gallium Nitride (GaN) m...
In this contribution a series of integrated circuits and methodologies, purposely developed for appl...
In this paper, an overview of recently reported low-noise amplifiers (LNAs), designed, and fabricate...
Abstract Single pole double throw (SPDT) switches are becoming more and more key components in phase...
Single Pole Double Throw (SPDT) switches are becoming more and more key components in phased-array r...
This work presents MMIC low-noise amplifiers based an AlGaN/GaN HEMT technology on SiC substrate for...
Abstract—The high power capabilities in combination with the low noise performance of Gallium Nitrid...
This paper presents a low-noise amplifier (LNA) operating between 8-11 GHz. Measurement results show...
Abstract – Apart from delivering very high output powers, GaN can also be used to realize robust rec...
Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs,...
Gallium-Nitride technology is known for its high power density and power amplifier designs, but is a...
In this contribution, a set of robust GaN MMIC T/R switches and low-noise amplifiers, all based on t...
This paper describes X-Band power amplifier (PA), low noise amplifier (LNA) and switches that can be...
In space applications, due to the large number of sources of interferences, RF receivers have to be ...
The high power capabilities in combination with the low noise performance of Gallium Nitride (GaN) m...
In this contribution a series of integrated circuits and methodologies, purposely developed for appl...
In this paper, an overview of recently reported low-noise amplifiers (LNAs), designed, and fabricate...
Abstract Single pole double throw (SPDT) switches are becoming more and more key components in phase...
Single Pole Double Throw (SPDT) switches are becoming more and more key components in phased-array r...
This work presents MMIC low-noise amplifiers based an AlGaN/GaN HEMT technology on SiC substrate for...
Abstract—The high power capabilities in combination with the low noise performance of Gallium Nitrid...
This paper presents a low-noise amplifier (LNA) operating between 8-11 GHz. Measurement results show...