With the introduction of 450 mm wafers, which are considerably larger than the currently largest wafers of 300mm, handling with side grippers is no longer possible and backside grippers are required. Backside gripping increases the possible buildup of particles on the backside of the wafers with possible cross-contamination to the front-side. Therefore, regular backside cleaning is required. Three vacuum compatible cleaning methods were selected. Tacky rollers and highvoltage cleaning were selected for particles and plasma cleaning for molecular layers. A test-bench was designed and constructed implementing these three cleaning methods. The first experiments show promising results for the plasma cleaner and the tacky roller. © 2012 SPIE
One of the critical issues still facing the implementation of extreme ultraviolet lithography (EUVL)...
The preparation of surfaces free of particle contamination is one of the crucial prerequisites for a...
Plasma processing is used for {approximately}35% of the process steps required for semiconductor man...
A single wafer cleaning system with full coverage back-side megasonics has been developed for pre-li...
Single wafer megasonics were used to remove backside particle contamination resulting from vacuum ch...
The removal of particles less than or equal to 1 J.lm in diameter adhered to surfaces poses a challe...
III-V on Silicon epitaxial wafers are typically contaminated with residual III-V materials on the ba...
Semiconductor technology is heading towards the 10 nm node and even smaller in the coming years. Thi...
This paper gives an overview about all activities performed within a common project between industri...
Since 1990s semiconductor wafer cleaning has been widely investigated to face front-end and back-end...
Cleaning processes are a key technology to achieve, restore and guarantee specified product cleanlin...
As the technology node scales down to 45nm and beyond, removal of particles and metal contamination ...
Semiconductor technology is heading toward the 10 nm node and even smaller in the coming years. This...
La miniaturisation et la complexification croissante des composants microélectroniques induit une se...
Contamination control during substrate handling is important because of the contamination potential ...
One of the critical issues still facing the implementation of extreme ultraviolet lithography (EUVL)...
The preparation of surfaces free of particle contamination is one of the crucial prerequisites for a...
Plasma processing is used for {approximately}35% of the process steps required for semiconductor man...
A single wafer cleaning system with full coverage back-side megasonics has been developed for pre-li...
Single wafer megasonics were used to remove backside particle contamination resulting from vacuum ch...
The removal of particles less than or equal to 1 J.lm in diameter adhered to surfaces poses a challe...
III-V on Silicon epitaxial wafers are typically contaminated with residual III-V materials on the ba...
Semiconductor technology is heading towards the 10 nm node and even smaller in the coming years. Thi...
This paper gives an overview about all activities performed within a common project between industri...
Since 1990s semiconductor wafer cleaning has been widely investigated to face front-end and back-end...
Cleaning processes are a key technology to achieve, restore and guarantee specified product cleanlin...
As the technology node scales down to 45nm and beyond, removal of particles and metal contamination ...
Semiconductor technology is heading toward the 10 nm node and even smaller in the coming years. This...
La miniaturisation et la complexification croissante des composants microélectroniques induit une se...
Contamination control during substrate handling is important because of the contamination potential ...
One of the critical issues still facing the implementation of extreme ultraviolet lithography (EUVL)...
The preparation of surfaces free of particle contamination is one of the crucial prerequisites for a...
Plasma processing is used for {approximately}35% of the process steps required for semiconductor man...