High performance a-IGZO thin-film transistors with mf-PVD SiO2 as an etch-stop-layer

Nag, M.
Steudel, S.
Bhoolokam, A.
Chasin, A.
Rockele, M.
Myny, K.
Maas, J.
Fritz, T.
Trube, J.
Groeseneken, G.
Heremans, P.

Publication date

January 2014

Publisher

Wiley-Blackwell Publishing Ltd

Abstract

In this work, we report on high-performance bottom-gate top-contact (BGTC) amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with SiO2 as an etch-stop-layer (ESL) deposited by medium frequency physical vapor deposition (mf-PVD). The TFTs show field-effect mobility (μFE) of 16.0cm2/(V.s), sub-threshold slope (SS -1) of 0.23V/decade and off-currents (IOFF)<1.0pA. The TFTs with mf-PVD SiO2 ESL deposited at room temperature were compared with TFTs made with the conventional plasma-enhanced chemical vapor deposition (PECVD) SiO2 ESL deposited at 300°C and at 200°C. The TFTs with different ESLs showed a comparable performance regarding μFE, SS-1, and IOFF, however, significant differences were measured in gate bias-stress st...

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High performance a-IGZO thin-film transistors with mf-PVD SiO2 as an etch-stop-layer

Abstract

Extracted data

High performance a-IGZO thin-film transistors with mf-PVD SiO2 as an etch-stop-layer

Abstract

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