GaN MMIC Power Amplifiers for S-band and X-band
- Suijker, E.M.
- Sudow, M.
- Fagerlind, M.
- Hek, A.P. de
- Vliet, F.E. van
- Rorsman, N.
Publication date
January 2008
DOI Publisher
Eurpean Microwave Association EuMAAbstract
The development of two GaN MMIC power amplifiers is reported. The amplifiers are processed in the AlGaN/GaN technology of Chalmers University of Technology using 0.25 μm HEMTs. The S-band amplifier operates at frequencies from 3 to 4 GHz and has a maximum output power of 5.6 W with an associated efficiency of 28 %. The X-band amplifier has a maximum output power of 4.8 W
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