Add to ORKGThis thesis focuses on growth and basic characterization of AlGaN/GaN based high electron mobility structures. In order to provide theoretical background for the presented research, the basic physical properties of III-V nitrides and the characteristics of the HEMT structures are discussed. Additionally, properties of substrates used for GaN epitaxy are describe
This paper reports on new approaches for growth control of GaN-based heterostructures for high frequ...
International audienceThis paper reports on the LP-MOCVD growth optimisation of GaAlN/GaN heterostru...
Heterostructure devices based on the AlInN material system have demonstrated unprecedented high freq...
Contains fulltext : 27418.pdf (publisher's version ) (Open Access)This thesis focu...
Group–III nitride semiconductors are viewed as the next-gen materials due to the high potential in o...
High-mobility Al0.3Ga0.7N/AlN/GaN high electron mobility transistors (HEMT) structure has been grown...
The thesis discusses about the structural and electrical properties of GaN based materials. The lite...
The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that mak...
The investigation of the III-V nitride-based driving circuits is in demand for the development of Ga...
The combination of wide band-gap and built-in electrical polarization renders III-nitride HEMTs idea...
AlInN/AlN/GaN high-electron-mobility transistor (HEMT) structures were grown on undoped-GaN-layers/s...
High-quality AlGaN/GaN high electron mobility transistor (HEMT) structures were grown by metalorgani...
Al0.3Ga0.7N/AlN/GaN HEMT structures with significantly high mobility have been grown by metalorganic...
The use of InAlN as barrier layer material is considered as promising idea to enhance the high frequ...
This paper reports on new approaches for growth control of GaN-based heterostructures for high frequ...
This paper reports on new approaches for growth control of GaN-based heterostructures for high frequ...
International audienceThis paper reports on the LP-MOCVD growth optimisation of GaAlN/GaN heterostru...
Heterostructure devices based on the AlInN material system have demonstrated unprecedented high freq...
Contains fulltext : 27418.pdf (publisher's version ) (Open Access)This thesis focu...
Group–III nitride semiconductors are viewed as the next-gen materials due to the high potential in o...
High-mobility Al0.3Ga0.7N/AlN/GaN high electron mobility transistors (HEMT) structure has been grown...
The thesis discusses about the structural and electrical properties of GaN based materials. The lite...
The III-nitride materials, consisting of Al, Ga, In and N, have several physical properties that mak...
The investigation of the III-V nitride-based driving circuits is in demand for the development of Ga...
The combination of wide band-gap and built-in electrical polarization renders III-nitride HEMTs idea...
AlInN/AlN/GaN high-electron-mobility transistor (HEMT) structures were grown on undoped-GaN-layers/s...
High-quality AlGaN/GaN high electron mobility transistor (HEMT) structures were grown by metalorgani...
Al0.3Ga0.7N/AlN/GaN HEMT structures with significantly high mobility have been grown by metalorganic...
The use of InAlN as barrier layer material is considered as promising idea to enhance the high frequ...
This paper reports on new approaches for growth control of GaN-based heterostructures for high frequ...
This paper reports on new approaches for growth control of GaN-based heterostructures for high frequ...
International audienceThis paper reports on the LP-MOCVD growth optimisation of GaAlN/GaN heterostru...
Heterostructure devices based on the AlInN material system have demonstrated unprecedented high freq...