This Letter presents an analysis of the zero temperature coefficient (ZTC) bias in junctionless nanowire transistors (JNTs). Unlike in previous works, which had shown that JNT did not present a ZTC point, this work shows that ZTC may occur in JNTs depending mainly on the series resistance of the devices and its dependence on the temperature. Experimental results of drain current, threshold voltage, and series resistance are presented for both long and short channel n and p-type devices. (C) 2012 American Institute of Physics. (http://dx.doi.org/10.1063/1.4744965
International audienceThe less surface roughness scattering effects, owing to the unique operation p...
International audienceThe less surface roughness scattering effects, owing to the unique operation p...
International audienceThe less surface roughness scattering effects, owing to the unique operation p...
This Letter presents an analysis of the zero temperature coefficient (ZTC) bias in junctionless nano...
This Letter presents an analysis of the zero temperature coefficient (ZTC) bias in junctionless nano...
This Letter presents an analysis of the zero temperature coefficient (ZTC) bias in junctionless nano...
Negative-bias-temperature-instability (NBTI) and hot-carrier induced device degradation have been ex...
Junctionless nanowire transistors show more marked oscillations conductance oscillations than invers...
This letter presents the properties of nMOS junctionless nanowire transistors (JNTs) under cryogenic...
This article investigates the Zero-Temperature-Coefficient (ZTC) bias point and its associated perfo...
This letter presents the properties of nMOS junctionless nanowire transistors (JNTs) under cryogenic...
This paper investigates the temperature dependence of the main electrical parameters of junctionless...
A diode has been realised using a silicon junctionless (JL) transistor. The device contains neither ...
The aim of this work is to analyze the operation of junctionless nanowire transistors down to the li...
International audienceThe less surface roughness scattering effects, owing to the unique operation p...
International audienceThe less surface roughness scattering effects, owing to the unique operation p...
International audienceThe less surface roughness scattering effects, owing to the unique operation p...
International audienceThe less surface roughness scattering effects, owing to the unique operation p...
This Letter presents an analysis of the zero temperature coefficient (ZTC) bias in junctionless nano...
This Letter presents an analysis of the zero temperature coefficient (ZTC) bias in junctionless nano...
This Letter presents an analysis of the zero temperature coefficient (ZTC) bias in junctionless nano...
Negative-bias-temperature-instability (NBTI) and hot-carrier induced device degradation have been ex...
Junctionless nanowire transistors show more marked oscillations conductance oscillations than invers...
This letter presents the properties of nMOS junctionless nanowire transistors (JNTs) under cryogenic...
This article investigates the Zero-Temperature-Coefficient (ZTC) bias point and its associated perfo...
This letter presents the properties of nMOS junctionless nanowire transistors (JNTs) under cryogenic...
This paper investigates the temperature dependence of the main electrical parameters of junctionless...
A diode has been realised using a silicon junctionless (JL) transistor. The device contains neither ...
The aim of this work is to analyze the operation of junctionless nanowire transistors down to the li...
International audienceThe less surface roughness scattering effects, owing to the unique operation p...
International audienceThe less surface roughness scattering effects, owing to the unique operation p...
International audienceThe less surface roughness scattering effects, owing to the unique operation p...
International audienceThe less surface roughness scattering effects, owing to the unique operation p...