Add to ORKGElectron microscopy calculations in minimum and maximum capacitance theories for silicon-silicon oxide structures and interface
Part of the base current in n-p-n transistors is caused by electrons recombining at the oxide covere...
Oxide barrier isolated regions of silicon single crystals in silicon dioxide matrix by epitaxial dep...
Piezoresistive effect in electron irradiated silicon and application to improved semiconductor strai...
Evaluation tests for electrical properties of oxide silicon interfaces in multilevel microcircuit
Several aspects of breakdown and charge trapping in silicon dioxide (SiO2) have been studied. First...
Thin film transport in polymer dielectrics, fabrication of semiconductor devices having digital or d...
Fabrication and testing of large area metal oxide silicon capacitors for micrometeoroid counting in ...
Fabrication on p-type GaAs of MOS structures in which the quality of the oxide is such that the surf...
Research into processing techniques for fabrication of vacuum microelectronic devices has been carri...
Ion implantation method for improving radiation resistance of thermal oxides on silico
Surface impurity and structural defect analysis on thermally grown silicon oxide integrated circui
Metal oxide semiconductor field effect transistor circuit development and laminated electronic packa...
Large scale integration microelectronic wafer and package testing including parametric and functiona...
Cataloged from PDF version of article.In x-ray photoemission measurements, differential charging cau...
Degradation, failure, and effects of electron irradiation on circuit reliability of silicon integrat...
Part of the base current in n-p-n transistors is caused by electrons recombining at the oxide covere...
Oxide barrier isolated regions of silicon single crystals in silicon dioxide matrix by epitaxial dep...
Piezoresistive effect in electron irradiated silicon and application to improved semiconductor strai...
Evaluation tests for electrical properties of oxide silicon interfaces in multilevel microcircuit
Several aspects of breakdown and charge trapping in silicon dioxide (SiO2) have been studied. First...
Thin film transport in polymer dielectrics, fabrication of semiconductor devices having digital or d...
Fabrication and testing of large area metal oxide silicon capacitors for micrometeoroid counting in ...
Fabrication on p-type GaAs of MOS structures in which the quality of the oxide is such that the surf...
Research into processing techniques for fabrication of vacuum microelectronic devices has been carri...
Ion implantation method for improving radiation resistance of thermal oxides on silico
Surface impurity and structural defect analysis on thermally grown silicon oxide integrated circui
Metal oxide semiconductor field effect transistor circuit development and laminated electronic packa...
Large scale integration microelectronic wafer and package testing including parametric and functiona...
Cataloged from PDF version of article.In x-ray photoemission measurements, differential charging cau...
Degradation, failure, and effects of electron irradiation on circuit reliability of silicon integrat...
Part of the base current in n-p-n transistors is caused by electrons recombining at the oxide covere...
Oxide barrier isolated regions of silicon single crystals in silicon dioxide matrix by epitaxial dep...
Piezoresistive effect in electron irradiated silicon and application to improved semiconductor strai...