Add to ORKGThin film silicon monoxide capacitor vacuum deposition and intact removal from substrate to study breakdown characteristic
Surface breakdown discharges are one probable failure mechanism of metallized polymeric film capacit...
Construction, capacitance and dissipation factor, and electrode materials for single layer capacitor...
Effective screening techniques are evaluated for detecting insulation resistance degradation and fai...
Research into processing techniques for fabrication of vacuum microelectronic devices has been carri...
Lai Kam Kwong.Thesis (M.Sc.)--Chinese University of Hong Kong.Bibliography: leaves 86-89
Feasibility of producing thin metal and oxide- film capacitors with stable electrical properties in ...
Thin film vacuum deposition semiconductors, electron tunneling devices, and field effect transistor
A study was conducted to develop cylindrical wound metallized film capacitors rated 2 micron F 500 V...
Many vacuum instruments used in industry and scientific research apply high voltage components. Vacu...
Hasan Padamsee, David Rubin, David HammerVoltage breakdown limits many technologies that rely on s...
This presentation gives a review of recent project failures caused by cracks in ceramic capacitors a...
Breakdown conduction in thin film dielectrics of silicon oxide, magnesium fluoride, calcium fluoride...
Effects of surface states and grain boundaries on free carrier concentration, mobility, and free pat...
Various aspects of capacitor technologies and applications are discussed. Major emphasis is placed o...
Thin film capacitors with up to twenty-two active layers have been deposited by RF sputtering. The m...
Surface breakdown discharges are one probable failure mechanism of metallized polymeric film capacit...
Construction, capacitance and dissipation factor, and electrode materials for single layer capacitor...
Effective screening techniques are evaluated for detecting insulation resistance degradation and fai...
Research into processing techniques for fabrication of vacuum microelectronic devices has been carri...
Lai Kam Kwong.Thesis (M.Sc.)--Chinese University of Hong Kong.Bibliography: leaves 86-89
Feasibility of producing thin metal and oxide- film capacitors with stable electrical properties in ...
Thin film vacuum deposition semiconductors, electron tunneling devices, and field effect transistor
A study was conducted to develop cylindrical wound metallized film capacitors rated 2 micron F 500 V...
Many vacuum instruments used in industry and scientific research apply high voltage components. Vacu...
Hasan Padamsee, David Rubin, David HammerVoltage breakdown limits many technologies that rely on s...
This presentation gives a review of recent project failures caused by cracks in ceramic capacitors a...
Breakdown conduction in thin film dielectrics of silicon oxide, magnesium fluoride, calcium fluoride...
Effects of surface states and grain boundaries on free carrier concentration, mobility, and free pat...
Various aspects of capacitor technologies and applications are discussed. Major emphasis is placed o...
Thin film capacitors with up to twenty-two active layers have been deposited by RF sputtering. The m...
Surface breakdown discharges are one probable failure mechanism of metallized polymeric film capacit...
Construction, capacitance and dissipation factor, and electrode materials for single layer capacitor...
Effective screening techniques are evaluated for detecting insulation resistance degradation and fai...