Add to ORKGVapor phase crystal growth and preparation of gallium, indium, arsenic, phosphorous, and antimony alloy semiconductor material
An experiment in gallium arsenide liquid phase epitaxy was performed successfully on the SPAR 6 flig...
Chemical vapor deposition system for improved Gunn effect devices using arsenic chloride 3 metho
Schottky barrier diode performance tests, Be doping of GaP, and S, Se, and Te diffusion into GaA
Vapor phase growth technique for III-V compound semiconductors containing aluminu
Vapor phase growth technique and system for several group 3 and 5 compound semiconductor
Vapor phase growth method for single crystalline preparation of gallium nitride, gallium arsenide al...
Vapor phase growth technique and system for group 3A and 5A compound semiconductor
Prepared under contract no. NAS 12-538 by RCA Laboratories for NASA."December 1971."Cover title.Incl...
107 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1981.The use of InGaAsP alloys for...
During the period of this research grant, the process of liquid phase electroepitaxy (LPEE) was used...
Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimon...
Heteroepitaxial growth of GaAs films on aluminum oxide substrates by trimethylgallium-arsine proces
The apparatus and techniques used in effort to determine the relationships between crystal growth an...
Journal ArticleGax In1−xAs lattice matched to the InP substrate (x=0.47) has been grown by organomet...
The growth and characterization of epitaxial indium gallium arsenide phosphide compound semiconducto...
An experiment in gallium arsenide liquid phase epitaxy was performed successfully on the SPAR 6 flig...
Chemical vapor deposition system for improved Gunn effect devices using arsenic chloride 3 metho
Schottky barrier diode performance tests, Be doping of GaP, and S, Se, and Te diffusion into GaA
Vapor phase growth technique for III-V compound semiconductors containing aluminu
Vapor phase growth technique and system for several group 3 and 5 compound semiconductor
Vapor phase growth method for single crystalline preparation of gallium nitride, gallium arsenide al...
Vapor phase growth technique and system for group 3A and 5A compound semiconductor
Prepared under contract no. NAS 12-538 by RCA Laboratories for NASA."December 1971."Cover title.Incl...
107 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1981.The use of InGaAsP alloys for...
During the period of this research grant, the process of liquid phase electroepitaxy (LPEE) was used...
Vapor phase deposition process forms a heavily doped n-region on a melt-grown p-type gallium antimon...
Heteroepitaxial growth of GaAs films on aluminum oxide substrates by trimethylgallium-arsine proces
The apparatus and techniques used in effort to determine the relationships between crystal growth an...
Journal ArticleGax In1−xAs lattice matched to the InP substrate (x=0.47) has been grown by organomet...
The growth and characterization of epitaxial indium gallium arsenide phosphide compound semiconducto...
An experiment in gallium arsenide liquid phase epitaxy was performed successfully on the SPAR 6 flig...
Chemical vapor deposition system for improved Gunn effect devices using arsenic chloride 3 metho
Schottky barrier diode performance tests, Be doping of GaP, and S, Se, and Te diffusion into GaA