Add to ORKGHeat and light effects on charge storage of silicon nitride memory capacitor following high temperature exposure in hydrogen and ammoni
The goal of this work is to give a clear physical comprehension of the charge loss mechanisms of SAN...
A high temperature electronics program at NASA Lewis Research Center focuses on dielectric and insul...
Development of high temperature electrical materials and testing in simulated space environmen
Conduction mechanisms and transient behavior of memory device using semiconductor device
Charge decay processes in memory device and in new metal nitride semiconductor light-sensitive memor...
Fabrication, properties, and application of metal nitride semiconductor/variable threshold transisto...
Memory device whose threshold voltage can be altered reproducibly by applied voltage puls
Application of aluminum nitrides as electrical insulator for electric capacitors is discussed. Elect...
Transient and quiescent electric conductivity in silicon after electron irradiation at room temperat...
The effects of nuclear radiation and high temperature environments must be fully known and understoo...
The electrical and electroluminescence (EL) properties at room and high temperatures of oxide/ nitri...
Ion implantation method for improving radiation resistance of thermal oxides on silico
The effects of high temperature annealing on the conduction and memory properties of MNOS memory dev...
Electronic applications are described that would benefit from the availability of high temperature s...
The thermal resistance of the thermal interface material layer greatly affects the maximum temperatu...
The goal of this work is to give a clear physical comprehension of the charge loss mechanisms of SAN...
A high temperature electronics program at NASA Lewis Research Center focuses on dielectric and insul...
Development of high temperature electrical materials and testing in simulated space environmen
Conduction mechanisms and transient behavior of memory device using semiconductor device
Charge decay processes in memory device and in new metal nitride semiconductor light-sensitive memor...
Fabrication, properties, and application of metal nitride semiconductor/variable threshold transisto...
Memory device whose threshold voltage can be altered reproducibly by applied voltage puls
Application of aluminum nitrides as electrical insulator for electric capacitors is discussed. Elect...
Transient and quiescent electric conductivity in silicon after electron irradiation at room temperat...
The effects of nuclear radiation and high temperature environments must be fully known and understoo...
The electrical and electroluminescence (EL) properties at room and high temperatures of oxide/ nitri...
Ion implantation method for improving radiation resistance of thermal oxides on silico
The effects of high temperature annealing on the conduction and memory properties of MNOS memory dev...
Electronic applications are described that would benefit from the availability of high temperature s...
The thermal resistance of the thermal interface material layer greatly affects the maximum temperatu...
The goal of this work is to give a clear physical comprehension of the charge loss mechanisms of SAN...
A high temperature electronics program at NASA Lewis Research Center focuses on dielectric and insul...
Development of high temperature electrical materials and testing in simulated space environmen