Add to ORKGCombination of complementary MOS and complementary bipolar circuits on monolithic silicon chi
Micropower transistor logic circuits designed to operate from power supply voltages which vary with ...
Metal oxide semiconductor field effect transistor circuit development and laminated electronic packa...
A shielded integrated complimentary MOS transistor structure is described which is used to prevent f...
The results are presented of a program to demonstrate the processes for fabricating complementary MI...
Digital subsystem design and development employing n-channel and p-channel in MOS FET units in compl...
The complete sequence used to manufacture complementary metal oxide semiconductor (CMOS) integrated ...
Metal oxide semiconductor and GaAs devices are discussed. Digital and analog circuits are described....
Several cycles of photoetching, dopant deposition, and drive-in produce selectively-doped regions an...
Abstract—Silicon complementary bipolar processes offer the possibility of realizing high-performance...
Speed required for Sisyphus experiment on Pioneer probe was attained at supply voltage well within c...
Fabrication of high temperature silicon carbide integrated circuit using junction-gate type field ef...
Design and performance of logic circuit chip for computerized design of MOS integrated circuit array
Microelectronic oscillator uses a bipolar transistor to circumvent the problem of developing suitabl...
The entire complement of standard cells and components, except for the set-reset flip-flop, was comp...
High-current, low-voltage silicon switching transistor redesigned for obtaining lowest possible satu...
Micropower transistor logic circuits designed to operate from power supply voltages which vary with ...
Metal oxide semiconductor field effect transistor circuit development and laminated electronic packa...
A shielded integrated complimentary MOS transistor structure is described which is used to prevent f...
The results are presented of a program to demonstrate the processes for fabricating complementary MI...
Digital subsystem design and development employing n-channel and p-channel in MOS FET units in compl...
The complete sequence used to manufacture complementary metal oxide semiconductor (CMOS) integrated ...
Metal oxide semiconductor and GaAs devices are discussed. Digital and analog circuits are described....
Several cycles of photoetching, dopant deposition, and drive-in produce selectively-doped regions an...
Abstract—Silicon complementary bipolar processes offer the possibility of realizing high-performance...
Speed required for Sisyphus experiment on Pioneer probe was attained at supply voltage well within c...
Fabrication of high temperature silicon carbide integrated circuit using junction-gate type field ef...
Design and performance of logic circuit chip for computerized design of MOS integrated circuit array
Microelectronic oscillator uses a bipolar transistor to circumvent the problem of developing suitabl...
The entire complement of standard cells and components, except for the set-reset flip-flop, was comp...
High-current, low-voltage silicon switching transistor redesigned for obtaining lowest possible satu...
Micropower transistor logic circuits designed to operate from power supply voltages which vary with ...
Metal oxide semiconductor field effect transistor circuit development and laminated electronic packa...
A shielded integrated complimentary MOS transistor structure is described which is used to prevent f...