Study of semiconductor heterojunctions of ZnSe, GaAs and Ge, 1 May - 31 July 1970

Growth and characterization of II-VI semiconductors for photonic device fabrication

Yarlagadda, Bhanu Prakash

January 2006

This work involved the growth and characterization of mismatched heteroepitaixal II-VI semiconductor...

The effect of nucleation on the quality of MBE-ZnSe/III-V heterostructures

Warlick, Emily L. (Emily Linda)

January 1997

Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Compute...

Growth of ZnSe/GaAs and ZnSe/Ge heterostructures by atmospheric pressure metalorganic chemical vapor deposition method

Pal, Samitinjoy

January 1996

Includes bibliographical references (pages [138]-153)The objective of the present research is to gro...

Study of semiconductor heterojunctions of ZnSe, GaAs and Ge Semiannual progress report, period ending 30 Sep. 1968

Milnes, A. G.
Feucht, D. L.

November 1968

Gain, frequency and temperature dependence in heterojunction transistors of GaAs, ZnSe, and G

Study of semiconductor heterojunctions of ZnSe, GaAs and Ge Quarterly report, 1 Aug. - 31 Oct. 1969

Feucht, D. L.
Milnes, A. G.

October 1969

Semiconductor heterojunctions of zinc selenides, gallium arsenides, and germaniu

Study of semiconductor heterojunctions of zinc selenide, gallium arsenide, and germanium

Feucht, D. L.
Milnes, A. G.

April 1969

Fabrication and properties of gallium arsenide and zinc selenide junctions with germanium, and of ga...

Study of semiconductor heterojunctions of ZnSe, GaAs and Ge

Feucht, D. L.
Milnes, A. G.

January 1971

Experimentals characteristics of semiconductor heterojunction pairs ZnS/GaP and ZnSe/Ga

The growth and microstructural characterization of ZnSe/GaAs quantum wells and double heterostructures

House, Jody L. (Jody Lee), 1970-

January 1998

Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...

An experimental investigation of radiation effects in semiconductors Semiannual status report, 1 Jan. - 30 Jun. 1967

Compton, W. D.

June 1967

Radiation effects on semiconductors, and recombination lifetimes in gamma-irradiated, boron-doped si...

Molecular Beam Epitaxy (MBE) II-VI-III-V System for Photonic and Electronic Devices

Fan, Zongjian

January 2021

Comprehensive investigations of the materials properties and device applications made from molecular...

Photoassisted MOVPE growth of ZnSSe and ZnMgSSe on GaAs substrate, and simulation and fabrication of HBT\u27s and solar cells

Parent, David Wahlgren

January 1999

This thesis describes the growth of high quality ZnSe, ZnSSe, and ZnMgSSe epitaxial films on GaAs su...

The MBE growth of zinc selenide/gallium arsenide heterostructures and characterization of epitaxial zinc selenide/gallium arsenide heterointerfaces

Qiu, Jun

January 1990

The ZnSe bandgap of 2.67 eV as compared to (Al,Ga)As having a 2.0 eV bandgap for an Al mole fraction...

An experimental investigation of radiation effects in semiconductors Semiannual status report, Jul. 1 - Dec. 31, 1967

Compton, W. D.

December 1967

Recombination luminescence of irradiated silicon, and hole-optical phonon interaction in degenerate ...

ZnSe Window Layers for GaAs and GaInP2 Solar Cells

Olsen, Larry C.

January 1995

This report concerns studies of the use of ZnSe as a window layer for GaAs solar cells. Well-oriente...

Crystal growth of ZnSe and related ternary compound semiconductors by physical vapor transport

Su, Ching-Hua

August 1993

The materials to be investigated are ZnSe and related ternary semiconducting alloys (e.g., ZnS(x)Se(...

Growth and characterization of II-VI semiconductors for photonic device fabrication

Yarlagadda, Bhanu Prakash

January 2006

This work involved the growth and characterization of mismatched heteroepitaixal II-VI semiconductor...

The effect of nucleation on the quality of MBE-ZnSe/III-V heterostructures

Warlick, Emily L. (Emily Linda)

January 1997

Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Compute...

Growth of ZnSe/GaAs and ZnSe/Ge heterostructures by atmospheric pressure metalorganic chemical vapor deposition method

Pal, Samitinjoy

January 1996

Includes bibliographical references (pages [138]-153)The objective of the present research is to gro...

Study of semiconductor heterojunctions of ZnSe, GaAs and Ge Semiannual progress report, period ending 30 Sep. 1968

Milnes, A. G.
Feucht, D. L.

November 1968

Gain, frequency and temperature dependence in heterojunction transistors of GaAs, ZnSe, and G

Study of semiconductor heterojunctions of ZnSe, GaAs and Ge Quarterly report, 1 Aug. - 31 Oct. 1969

Feucht, D. L.
Milnes, A. G.

October 1969

Semiconductor heterojunctions of zinc selenides, gallium arsenides, and germaniu

Study of semiconductor heterojunctions of zinc selenide, gallium arsenide, and germanium

Feucht, D. L.
Milnes, A. G.

April 1969

Fabrication and properties of gallium arsenide and zinc selenide junctions with germanium, and of ga...

Study of semiconductor heterojunctions of ZnSe, GaAs and Ge

Feucht, D. L.
Milnes, A. G.

January 1971

Experimentals characteristics of semiconductor heterojunction pairs ZnS/GaP and ZnSe/Ga

The growth and microstructural characterization of ZnSe/GaAs quantum wells and double heterostructures

House, Jody L. (Jody Lee), 1970-

January 1998

Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...

An experimental investigation of radiation effects in semiconductors Semiannual status report, 1 Jan. - 30 Jun. 1967

Compton, W. D.

June 1967

Radiation effects on semiconductors, and recombination lifetimes in gamma-irradiated, boron-doped si...

Molecular Beam Epitaxy (MBE) II-VI-III-V System for Photonic and Electronic Devices

Fan, Zongjian

January 2021

Comprehensive investigations of the materials properties and device applications made from molecular...

Photoassisted MOVPE growth of ZnSSe and ZnMgSSe on GaAs substrate, and simulation and fabrication of HBT\u27s and solar cells

Parent, David Wahlgren

January 1999

This thesis describes the growth of high quality ZnSe, ZnSSe, and ZnMgSSe epitaxial films on GaAs su...

The MBE growth of zinc selenide/gallium arsenide heterostructures and characterization of epitaxial zinc selenide/gallium arsenide heterointerfaces

Qiu, Jun

January 1990

The ZnSe bandgap of 2.67 eV as compared to (Al,Ga)As having a 2.0 eV bandgap for an Al mole fraction...

An experimental investigation of radiation effects in semiconductors Semiannual status report, Jul. 1 - Dec. 31, 1967

Compton, W. D.

December 1967

Recombination luminescence of irradiated silicon, and hole-optical phonon interaction in degenerate ...

ZnSe Window Layers for GaAs and GaInP2 Solar Cells

Olsen, Larry C.

January 1995

This report concerns studies of the use of ZnSe as a window layer for GaAs solar cells. Well-oriente...

Crystal growth of ZnSe and related ternary compound semiconductors by physical vapor transport

Su, Ching-Hua

August 1993

The materials to be investigated are ZnSe and related ternary semiconducting alloys (e.g., ZnS(x)Se(...

Growth and characterization of II-VI semiconductors for photonic device fabrication

Yarlagadda, Bhanu Prakash

January 2006

This work involved the growth and characterization of mismatched heteroepitaixal II-VI semiconductor...

The effect of nucleation on the quality of MBE-ZnSe/III-V heterostructures

Warlick, Emily L. (Emily Linda)

January 1997

Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Compute...

Growth of ZnSe/GaAs and ZnSe/Ge heterostructures by atmospheric pressure metalorganic chemical vapor deposition method

Pal, Samitinjoy

January 1996

Includes bibliographical references (pages [138]-153)The objective of the present research is to gro...

Study of semiconductor heterojunctions of ZnSe, GaAs and Ge, 1 May - 31 July 1970

Abstract

Extracted data

Study of semiconductor heterojunctions of ZnSe, GaAs and Ge, 1 May - 31 July 1970

Abstract

Extracted data

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