Add to ORKGProduction and optical properties of zinc selenide aluminum arsenide heterojunction and platinum zinc selenide Schottky junctio
Schottky barrier diode performance tests, Be doping of GaP, and S, Se, and Te diffusion into GaA
The use of ZnSe to obtain efficient, short wavelength injection luminescence was investigated. It wa...
Fundamental processes in optical behavior of solids and associated with photovoltaic energy conversi...
During this report period work was performed on the modeling of High Field Electronic Transport in B...
Fabrication and properties of gallium arsenide and zinc selenide junctions with germanium, and of ga...
Solid crystal ingot growth by traveling heater method for electroluminescent light source
Aluminum alloy compounds as wide band gap semiconductors for electroluminescent light source
AbstractWhile much attention has been focussed on the III-nitride compound semiconductors for the fa...
ZnSe single crystals of high quality and low impurity levels are desired for use as substrates in op...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
Cadmium selenide-zinc selenide film is used as a thin film semiconductor rectifier. The film is vapo...
The materials to be investigated are ZnSe and related ternary semiconducting alloys (e.g., ZnS(x)Se(...
Barrier diodes formed by nickel evaporation on undoped gallium phosphide by vertical liquid epitax
This thesis contains the author's work in preparing efficient EL phosphors, the details of fabricati...
Despite the success of III-nitride materials in the fabrication of short-wavelength emitters, wide-b...
Schottky barrier diode performance tests, Be doping of GaP, and S, Se, and Te diffusion into GaA
The use of ZnSe to obtain efficient, short wavelength injection luminescence was investigated. It wa...
Fundamental processes in optical behavior of solids and associated with photovoltaic energy conversi...
During this report period work was performed on the modeling of High Field Electronic Transport in B...
Fabrication and properties of gallium arsenide and zinc selenide junctions with germanium, and of ga...
Solid crystal ingot growth by traveling heater method for electroluminescent light source
Aluminum alloy compounds as wide band gap semiconductors for electroluminescent light source
AbstractWhile much attention has been focussed on the III-nitride compound semiconductors for the fa...
ZnSe single crystals of high quality and low impurity levels are desired for use as substrates in op...
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer...
Cadmium selenide-zinc selenide film is used as a thin film semiconductor rectifier. The film is vapo...
The materials to be investigated are ZnSe and related ternary semiconducting alloys (e.g., ZnS(x)Se(...
Barrier diodes formed by nickel evaporation on undoped gallium phosphide by vertical liquid epitax
This thesis contains the author's work in preparing efficient EL phosphors, the details of fabricati...
Despite the success of III-nitride materials in the fabrication of short-wavelength emitters, wide-b...
Schottky barrier diode performance tests, Be doping of GaP, and S, Se, and Te diffusion into GaA
The use of ZnSe to obtain efficient, short wavelength injection luminescence was investigated. It wa...
Fundamental processes in optical behavior of solids and associated with photovoltaic energy conversi...