Add to ORKGA description of the MOS transistor used in the FETSIM analysis program is presented. CMOS/SOS device parameters are included. Typical device mobilities are given as well as the empirically determined constants necessary to model second-order effect conductance variations due to gate voltage and saturated drain voltage
Abstract—In this paper, we present a channel thickness dependent analytical model for MoS2 symmetri...
In this thesis, analyticalmodeling of aMOSFET as well as investigation of its gate drive was perform...
Causes of instability, high threshold voltage, and gamma radiation sensitivity of metal-oxide silico...
Using specified mathematical models of the MOSFET device, the optimal values of the model-dependent ...
A batch program written in FORTRAN IV which does D.C. and transient analysis of MOS circuits is pres...
775-782 A power VDMOSFET has been simulated using PISCES-II, a 2-D numerical device simulato...
ABSTRACT:-In this paper, a simple general yet realistic MOSFET model named n th power law MOSFET mod...
In an investigation of metal oxide semiconductor field effect transistor (MOFSET) devices, a one-dim...
The modeling of semiconductor device characteristics using unified table and analytical models for a...
by Tse Man Siu.Thesis (M.Phil.)--Chinese University of Hong Kong, 1988.Bibliography: leaves 203-210
Presents accurate device models (1-3 percent) to describe the /b I //sub D/-/b V//sub D/ electrical ...
An empirical non-linear model for SOI MOSFET useful for large-signal simulations of high frequency c...
In this thesis, we explore the performance characteristics, speci cally the drain current drive, of ...
SUPREM4 simulation for lateral DMOSFET’s are discussed, as well as the Medici simulation of their el...
The use of dry processing and alternate dielectrics for processing wafers is reported. A two dimensi...
Abstract—In this paper, we present a channel thickness dependent analytical model for MoS2 symmetri...
In this thesis, analyticalmodeling of aMOSFET as well as investigation of its gate drive was perform...
Causes of instability, high threshold voltage, and gamma radiation sensitivity of metal-oxide silico...
Using specified mathematical models of the MOSFET device, the optimal values of the model-dependent ...
A batch program written in FORTRAN IV which does D.C. and transient analysis of MOS circuits is pres...
775-782 A power VDMOSFET has been simulated using PISCES-II, a 2-D numerical device simulato...
ABSTRACT:-In this paper, a simple general yet realistic MOSFET model named n th power law MOSFET mod...
In an investigation of metal oxide semiconductor field effect transistor (MOFSET) devices, a one-dim...
The modeling of semiconductor device characteristics using unified table and analytical models for a...
by Tse Man Siu.Thesis (M.Phil.)--Chinese University of Hong Kong, 1988.Bibliography: leaves 203-210
Presents accurate device models (1-3 percent) to describe the /b I //sub D/-/b V//sub D/ electrical ...
An empirical non-linear model for SOI MOSFET useful for large-signal simulations of high frequency c...
In this thesis, we explore the performance characteristics, speci cally the drain current drive, of ...
SUPREM4 simulation for lateral DMOSFET’s are discussed, as well as the Medici simulation of their el...
The use of dry processing and alternate dielectrics for processing wafers is reported. A two dimensi...
Abstract—In this paper, we present a channel thickness dependent analytical model for MoS2 symmetri...
In this thesis, analyticalmodeling of aMOSFET as well as investigation of its gate drive was perform...
Causes of instability, high threshold voltage, and gamma radiation sensitivity of metal-oxide silico...