Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 - July 30, 200
The nondestructive characterization of nanoscale devices, such as those based on semiconductor nanow...
We give an introduction to modern electron microscopy techniques, applied to semiconductor structure...
Semiconductor nanowires are studied by using transmission electron microscopy (TEM) based methods in...
Incorporation of catalyst atoms during the growth process of semiconductor nanowires reduces the ele...
This thesis presents a quantitative high-angle annular dark eld scanning transmission electron micro...
As semiconducting nanowires have promising applications for materials science, nanoelectronics and p...
In this chapter, three types of phenomena (electrical, mechanical, and electromechanical) that can b...
Màster en Nanociència i Nanotecnologia. Curs 2007-2008. Directors: Francesca Peiró i Martínez and Jo...
In recent years, the performance of electron microscopes has been greatly improved through the imple...
Nanowires show great promise for development in many technological applications including electronic...
Incorporation of catalyst atoms during the growth process of semiconductor nanowires reduces the ele...
Nanowires have the potential to be a very flexible platform for the design of semiconductor devices....
In this work, the morphology and crystal structure of epitaxial semiconductor nanowire structures gr...
For the purpose of functionalizing III-V semiconductor nanowires using n-doping, Sn-doped GaAs zincb...
Semiconductor nanowires have many properties which makes them interesting for future electronic devi...
The nondestructive characterization of nanoscale devices, such as those based on semiconductor nanow...
We give an introduction to modern electron microscopy techniques, applied to semiconductor structure...
Semiconductor nanowires are studied by using transmission electron microscopy (TEM) based methods in...
Incorporation of catalyst atoms during the growth process of semiconductor nanowires reduces the ele...
This thesis presents a quantitative high-angle annular dark eld scanning transmission electron micro...
As semiconducting nanowires have promising applications for materials science, nanoelectronics and p...
In this chapter, three types of phenomena (electrical, mechanical, and electromechanical) that can b...
Màster en Nanociència i Nanotecnologia. Curs 2007-2008. Directors: Francesca Peiró i Martínez and Jo...
In recent years, the performance of electron microscopes has been greatly improved through the imple...
Nanowires show great promise for development in many technological applications including electronic...
Incorporation of catalyst atoms during the growth process of semiconductor nanowires reduces the ele...
Nanowires have the potential to be a very flexible platform for the design of semiconductor devices....
In this work, the morphology and crystal structure of epitaxial semiconductor nanowire structures gr...
For the purpose of functionalizing III-V semiconductor nanowires using n-doping, Sn-doped GaAs zincb...
Semiconductor nanowires have many properties which makes them interesting for future electronic devi...
The nondestructive characterization of nanoscale devices, such as those based on semiconductor nanow...
We give an introduction to modern electron microscopy techniques, applied to semiconductor structure...
Semiconductor nanowires are studied by using transmission electron microscopy (TEM) based methods in...