Add to ORKGIon implantation in GaN at liquid-nitrogen temperature : structural characteristics and amorphization / B. Rauschenbach. - In: Physical review. B. 57. 1998. S. 2530-253
Ion implantation has played an enabling role in the realization of many high performance photonic an...
We study the evolution of sheet resistance of n-type GaN epilayers irradiated with MeV 1H and 12C io...
Raman scattering in ion-implanted GaN / B. Rauschenbach ... - In: Applied physics letters. 72. 1998....
Ion implantation in GaN at liquid-nitrogen temperature : structural characteristics and amorphizatio...
This paper deals with the results of a systematic investigation of damage generation and accumulatio...
The effect of ion species on the damage buildup behavior in wurtzite GaN under bombardment at liquid...
The effects of implant conditions on the damage build-up in wurtzite GaN films are studied by Ruther...
The effect of ion species on the damage buildup behavior in wurtzite GaN under bombardment at liquid...
Ca+ and Mg+ ions were homogeneously implanted in GaN in a dose range between 5 × 1012 and 7.3 × 1016...
Ion channeling and cross-sectional transmission electron microscopy were used to study the extent an...
The structural characteristics of wurtzite GaN films bombarded up to high ion doses are studied by a...
GaN is implanted with 90 keV Mg-ions and afterwards annealed at 1150°C in a rapid thermal annealing ...
The crystallographic damage induced in GaN by 300 keV rare earth ions implantation has been investig...
Lattice expansion of Ca and Ar ion implanted GaN / B. Rauschenbach ... - In: Applied physics letters...
Ion implantation has played an enabling role in the realization of many high performance photonic an...
We study the evolution of sheet resistance of n-type GaN epilayers irradiated with MeV 1H and 12C io...
Raman scattering in ion-implanted GaN / B. Rauschenbach ... - In: Applied physics letters. 72. 1998....
Ion implantation in GaN at liquid-nitrogen temperature : structural characteristics and amorphizatio...
This paper deals with the results of a systematic investigation of damage generation and accumulatio...
The effect of ion species on the damage buildup behavior in wurtzite GaN under bombardment at liquid...
The effects of implant conditions on the damage build-up in wurtzite GaN films are studied by Ruther...
The effect of ion species on the damage buildup behavior in wurtzite GaN under bombardment at liquid...
Ca+ and Mg+ ions were homogeneously implanted in GaN in a dose range between 5 × 1012 and 7.3 × 1016...
Ion channeling and cross-sectional transmission electron microscopy were used to study the extent an...
The structural characteristics of wurtzite GaN films bombarded up to high ion doses are studied by a...
GaN is implanted with 90 keV Mg-ions and afterwards annealed at 1150°C in a rapid thermal annealing ...
The crystallographic damage induced in GaN by 300 keV rare earth ions implantation has been investig...
Lattice expansion of Ca and Ar ion implanted GaN / B. Rauschenbach ... - In: Applied physics letters...
Ion implantation has played an enabling role in the realization of many high performance photonic an...
We study the evolution of sheet resistance of n-type GaN epilayers irradiated with MeV 1H and 12C io...
Raman scattering in ion-implanted GaN / B. Rauschenbach ... - In: Applied physics letters. 72. 1998....