We report the first successful terahertz het- erodyne communication using a field-effect transistor for detection. The communication is a real-time transmission of an uncompressed high-definition TV signal at a data rate of 1.5 Gbps with a 307-GHz carrier frequency. The emitter is a frequency-multiplied amplifier chain whose last stage is a second harmonic mixer that multiplies the carrier signal by the data. The receiver only consists of a GaAs high-electron- mobility transistor that acts as a quadratic receiver, and two 20-dB-gain amplifiers, no limiting amplifier or forward error correction were used. A direct communication would be impossible with such a combination of modulation scheme at emission and quadratic detection at reception, ...
High electron mobility transistors can work as room-temperature directdetectors of radiation at freq...
We present the realization of high electron mobility transistors on GaN-heterostructures usable for ...
We fabricated a two-dimensional-electron-gas field effect transistor with an asymmetric terahertz an...
We report on the first error-free terahertz (THz) wireless communication at 0.310 THz for data rates...
International audienceWe report on terahertz wireless communication experiments at 0.2 THz, using a ...
One of the major objectives of communication systems is the ability to transmit data at the highest ...
Un des objectifs majeurs des systèmes de communication est de pouvoir transmettre des données aux pl...
Abstract—We demonstrate an efficient scheme for mixing and down-conversion of two orthogonally polar...
Performance of a detector based on AlGaAs/InGaAs/GaAs-material system was studied. The detector was ...
The heterodyne detection characteristics of field effect transistors are studied in this paper. Base...
A 600 GHz data transmission using the combination of a photonic emission using a uni-travelling carr...
Numerical method on the heterodyne terahertz detection characteristics of field effect characteristi...
Numerical method on the heterodyne terahertz detection characteristics of field effect characteristi...
Imaging at 0.6 THz is tested with a commercial GaAs high-electron-mobility transistor (HEMT) operate...
This is an overview of the main physical ideas for application of field effect transistors for gener...
High electron mobility transistors can work as room-temperature directdetectors of radiation at freq...
We present the realization of high electron mobility transistors on GaN-heterostructures usable for ...
We fabricated a two-dimensional-electron-gas field effect transistor with an asymmetric terahertz an...
We report on the first error-free terahertz (THz) wireless communication at 0.310 THz for data rates...
International audienceWe report on terahertz wireless communication experiments at 0.2 THz, using a ...
One of the major objectives of communication systems is the ability to transmit data at the highest ...
Un des objectifs majeurs des systèmes de communication est de pouvoir transmettre des données aux pl...
Abstract—We demonstrate an efficient scheme for mixing and down-conversion of two orthogonally polar...
Performance of a detector based on AlGaAs/InGaAs/GaAs-material system was studied. The detector was ...
The heterodyne detection characteristics of field effect transistors are studied in this paper. Base...
A 600 GHz data transmission using the combination of a photonic emission using a uni-travelling carr...
Numerical method on the heterodyne terahertz detection characteristics of field effect characteristi...
Numerical method on the heterodyne terahertz detection characteristics of field effect characteristi...
Imaging at 0.6 THz is tested with a commercial GaAs high-electron-mobility transistor (HEMT) operate...
This is an overview of the main physical ideas for application of field effect transistors for gener...
High electron mobility transistors can work as room-temperature directdetectors of radiation at freq...
We present the realization of high electron mobility transistors on GaN-heterostructures usable for ...
We fabricated a two-dimensional-electron-gas field effect transistor with an asymmetric terahertz an...