High Throughput Characterization of Epitaxially Grown Single-Layer MoS2

The growth of single-layer MoS2 with chemical vapor deposition is an established method that can produce large-area and high quality samples. In this article, we investigate the geometrical and optical properties of hundreds of individual single-layer MoS2 crystallites grown on a highly-polished sapphire substrate. Most of the crystallites are oriented along the terraces of the sapphire substrate and have an area comprised between 10 µm2 and 60 µm2. Differential reflectance measurements performed on these crystallites show that the area of the MoS2 crystallites has an influence on the position and broadening of the B exciton while the orientation does not influence the A and B excitons of MoS2. These measurements demonstrate that differential reflectance measurements have the potential to be used to characterize the homogeneity of large-area chemical vapor deposition (CVD)-grown samples.Andres Castellanos-Gomez acknowledges support from the European Commission (Graphene Flagship: contract CNECTICT-604391), the MINECO (Ramón y Cajal 2014 program RYC-2014-01406 and program MAT2014-58399-JIN) and the Comunidad de Madrid (MAD2D-CM program S2013/MIT-3007). Riccardo Frisenda acknowledges support from The Netherlands Organisation for Scientific Research (NWO, Rubicon 680-50-1515). David Perez de Lara acknowledges support from the MINECO (program FIS2015-67367-C2-1-p). Andras Kis and Dimitri Dumcenco acknowledge funding from Swiss SNF Sinergia Grant No. 147607.We acknowledge support by the CSIC Open Access Publication Initiative through its Unit of Information Resources for Research (URICI)