This thesis is devoted to the study of the optical and vibrational properties of indium nitride (InN) and indium gallium nitride (InGaN) at room and high-pressure conditions. For this purpose, we have employed spectroscopic tools such as absorption spectroscopy or Raman scattering in order to investigate a series of InN and InGaN thin films grown with different methods and on different substrates. For the high-pressure measurements, we have employed the diamond anvil cell technique. High-pressure optical absorption experiments on InN epilayers have allowed us to observe the direct-to-indirect bandgap transition at 15 GPa, where wurtzite InN (w-InN) transits to the rocksalt polymorph (rs-InN). Investigating w-InN samples with different level...
The objective of this dissertation is to shed light on the physical properties of InN epilayers grow...
International audienceIndium nitride was grown on Al2O3 substrate and characterized by x-ray diffrac...
The dependency of the structural and optoelectronic properties of InN thin films grown by high-press...
[eng] This thesis is devoted to the study of the optical and vibrational properties of indium nitrid...
This thesis is devoted to the study of the optical and vibrational properties of indium nitride (InN...
We have performed high-pressure Fourier transform infrared reflectance measurements on a freestandin...
Indium nitride under high pressure up to 50 GPa was analyzed by means of Raman spectroscopy. The wur...
Structural stability, electronic, and optical properties of InN under high pressure are studied usin...
AbstractThe structural, electronic and vibrational properties of InN under pressures up to 20GPa hav...
Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only...
Indium nitride (InN) and indium-rich group III-nitride alloys are promising for a variety of advance...
We theoretically study the electronic properties, and,pressure-induced solid-solid phase transformat...
This thesis is devoted to the study of the interactions of phonons in indium nitride (InN) and mater...
The influences of reactor pressure on the stoichiometry, free carrier concentration, IR and Hall det...
International audiencePhonon dispersion ω(q) and phonon density of states g(ω) of the high-pressure ...
The objective of this dissertation is to shed light on the physical properties of InN epilayers grow...
International audienceIndium nitride was grown on Al2O3 substrate and characterized by x-ray diffrac...
The dependency of the structural and optoelectronic properties of InN thin films grown by high-press...
[eng] This thesis is devoted to the study of the optical and vibrational properties of indium nitrid...
This thesis is devoted to the study of the optical and vibrational properties of indium nitride (InN...
We have performed high-pressure Fourier transform infrared reflectance measurements on a freestandin...
Indium nitride under high pressure up to 50 GPa was analyzed by means of Raman spectroscopy. The wur...
Structural stability, electronic, and optical properties of InN under high pressure are studied usin...
AbstractThe structural, electronic and vibrational properties of InN under pressures up to 20GPa hav...
Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only...
Indium nitride (InN) and indium-rich group III-nitride alloys are promising for a variety of advance...
We theoretically study the electronic properties, and,pressure-induced solid-solid phase transformat...
This thesis is devoted to the study of the interactions of phonons in indium nitride (InN) and mater...
The influences of reactor pressure on the stoichiometry, free carrier concentration, IR and Hall det...
International audiencePhonon dispersion ω(q) and phonon density of states g(ω) of the high-pressure ...
The objective of this dissertation is to shed light on the physical properties of InN epilayers grow...
International audienceIndium nitride was grown on Al2O3 substrate and characterized by x-ray diffrac...
The dependency of the structural and optoelectronic properties of InN thin films grown by high-press...