We suggested recently that the band-gap narrowing in dilute GaAs 1-xNx alloys can be explained to result from the broadening of the localized N states due to the N-N interaction along the zigzag chains in the âŒPeer reviewe
Using spectroscopic ellipsometry measurements on GaP1−χBiχ/GaP epitaxial layers up to χ = 3.7% we ob...
Typical supercell approaches used to investigate the electronic properties of GaAs(1−x)Bi(x) produce...
This thesis explores the effect of incorporation of nitrogen or bismuth in GaAs on electronic states...
We suggested recently that the band-gap narrowing in dilute GaAs 1-xNx alloys can be explained to re...
Abstract. The addition of dilute concentrations of bismuth (Bi) into GaAs to form GaBixAs1−x alloys ...
For large size- and chemical-mismatched isovalent semiconductor alloys, such as N and Bi substitutio...
The origin of the band gap bowing in dilute nitrogen doped gallium based III-V semiconductors is lar...
The structural and electronic properties of cubic GaAs(1-x)Bix alloys with bismuth concentration 0.0...
The band-anticrossing (BAC) model has been widely applied to analyse the electronic structure of dil...
First-principles calculations have been performed to investigate the structural, electronic and opti...
Using spectroscopic ellipsometry measurements on GaP1−xBix/GaP epitaxial layers up to x = 3.7% we ob...
First-principles calculations have been performed to investigate the structural, electronic and opti...
Using spectroscopic ellipsometry measurements on GaP1−xBix/GaP epitaxial layers up to x = 3.7% we ob...
Using spectroscopic ellipsometry measurements on GaP1−xBix/GaP epitaxial layers up to x = 3.7% we ob...
Dilute bismide alloys, containing small fractions of bismuth (Bi), have recently attracted interest ...
Using spectroscopic ellipsometry measurements on GaP1−χBiχ/GaP epitaxial layers up to χ = 3.7% we ob...
Typical supercell approaches used to investigate the electronic properties of GaAs(1−x)Bi(x) produce...
This thesis explores the effect of incorporation of nitrogen or bismuth in GaAs on electronic states...
We suggested recently that the band-gap narrowing in dilute GaAs 1-xNx alloys can be explained to re...
Abstract. The addition of dilute concentrations of bismuth (Bi) into GaAs to form GaBixAs1−x alloys ...
For large size- and chemical-mismatched isovalent semiconductor alloys, such as N and Bi substitutio...
The origin of the band gap bowing in dilute nitrogen doped gallium based III-V semiconductors is lar...
The structural and electronic properties of cubic GaAs(1-x)Bix alloys with bismuth concentration 0.0...
The band-anticrossing (BAC) model has been widely applied to analyse the electronic structure of dil...
First-principles calculations have been performed to investigate the structural, electronic and opti...
Using spectroscopic ellipsometry measurements on GaP1−xBix/GaP epitaxial layers up to x = 3.7% we ob...
First-principles calculations have been performed to investigate the structural, electronic and opti...
Using spectroscopic ellipsometry measurements on GaP1−xBix/GaP epitaxial layers up to x = 3.7% we ob...
Using spectroscopic ellipsometry measurements on GaP1−xBix/GaP epitaxial layers up to x = 3.7% we ob...
Dilute bismide alloys, containing small fractions of bismuth (Bi), have recently attracted interest ...
Using spectroscopic ellipsometry measurements on GaP1−χBiχ/GaP epitaxial layers up to χ = 3.7% we ob...
Typical supercell approaches used to investigate the electronic properties of GaAs(1−x)Bi(x) produce...
This thesis explores the effect of incorporation of nitrogen or bismuth in GaAs on electronic states...