Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

Susoma, Jannatul
Lahtinen, Jouko
Kim, Maria
Riikonen, Juha
Lipsanen, Harri

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Publication date

January 2017

DOI

10.1063/1.4973918

Publisher

AIP Publishing

Journal

AIP Advances

Abstract

We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al2O3 encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions.Peer reviewe

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Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

Abstract

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Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

Abstract

Extracted data

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