International audienceWe perform transport measurements on double quantum dots defined in Ge/Si core/shell nanowires and focus on Pauli spin blockade in the regime where tens of holes occupy each dot. We identify spin blockade through the magnetic field dependence of the leakage current. We find both a dip and a peak in the leakage current at zero field. We analyze this behavior in terms of quantum dot parameters such as coupling to the leads, interdot tunnel coupling, as well as spin-orbit interaction. We estimate a lower bound on the spin-orbit parameter corresponding to an upper bound of lso = 500 nm for the Rashba spin-orbit length. We also extract effective Landé g factors up to 8.0 from field-dependent spin blockade measurements
Spins in semiconductor quantum dots are among the most promising candidates for the realization of a...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We investigate tunable hole quantum dots defined by surface gating Ge/Si core-shell nanowire heteros...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
The distribution of Coulomb blockade peak heights as a function of magnetic field is investigated ex...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We report on experimental detection of the spin-orbit interaction field in an InAs nanowire double q...
We study electron transport in a double quantum dot in the Pauli spin blockade regime in the presenc...
In a universal quantum computer, coherent control over the state of a quantum mechanical two-level s...
In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based double qua...
In a universal quantum computer, coherent control over the state of a quantum mechanical two-level s...
Spins in semiconductor quantum dots are among the most promising candidates for the realization of a...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We investigate tunable hole quantum dots defined by surface gating Ge/Si core-shell nanowire heteros...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
The distribution of Coulomb blockade peak heights as a function of magnetic field is investigated ex...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We report on experimental detection of the spin-orbit interaction field in an InAs nanowire double q...
We study electron transport in a double quantum dot in the Pauli spin blockade regime in the presenc...
In a universal quantum computer, coherent control over the state of a quantum mechanical two-level s...
In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based double qua...
In a universal quantum computer, coherent control over the state of a quantum mechanical two-level s...
Spins in semiconductor quantum dots are among the most promising candidates for the realization of a...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we ...