Evaluation of the Sensitive of a COTS 90-nm Memory at Low Bias Voltage

Clemente, J.A.
Hubert, G.
Franco, F.
Villa, Francesca
Baylac, Maud
Mecha, H.
Velazco, Raoul

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Publication date

September 2016

DOI

10.1109/RADECS.2016.8093183

Publisher

HAL CCSD

Abstract

International audienceThis paper presents an experimental study of the sensitivity to 14-MeV neutrons to low bias voltage of a COTS 90-nm Cypress SRAM. Experiments involving power supplies ranging from 0.5V to 3.3V are presented and discussed. These results have also been compared with cross-section and SER theoretical predictions

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Evaluation of the Sensitive of a COTS 90-nm Memory at Low Bias Voltage

Abstract

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Evaluation of the Sensitive of a COTS 90-nm Memory at Low Bias Voltage

Abstract

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