Magnetic films consisting of an antiferromagnetic (AFM) layer sandwiched between two non-equivalent ferromagnetic (FM) layers have recently attracted a great interest. In fact, in this configuration, each interface of the AFM layer is exchange-coupled to a different FM layer and information on the AFM magnetic structure may be obtained by the analysis of the exchange bias effect [1]. In this work, we focus on the spin wave properties dynamics of samples (deposited by DC magnetron sputtering in a magnetic field of 400 Oe) with layer-stacking sequence Si/Cu[5 nm]/Py[5 nm]/IrMn[10 nm]/Cu[tCu]/Py[10 nm], where Py is Ni80Fe20, IrMn is Ir25Mn75, and tCu, the nominal thickness of a Cu spacer, is varied in the 0 - 0.2 nm range. Since tCu is lower...
The scientific interest towards antiferromagnetic (AFM) materials has been increasing continuously m...
Ferromagnetic resonance FMR and magnetization MAG measurements were used to study the exchange inter...
The magnetothermal behavior of antiferromagnetic IrMn layers of different thickness (tAFM = 3, 6, 10...
Brillouin light scattering (BLS) was exploited to study the effect of the exchange coupling (EC) at ...
Brillouin light scattering (BLS) was exploited to study the effect of the exchange coupling (EC) at ...
Brillouin light scattering (BLS) was exploited to study the effect of the exchange coupling (EC) at ...
Brillouin light scattering (BLS) was exploited to study the spin wave properties of spin-valve (SV) ...
Nowadays, several advanced magnetic and magnetoelectronic devices rely on interface exchange couplin...
The study of the exchange bias (EB) interaction between ferromagnetic (FM) and antiferromagnetic (AF...
It is now largely demonstrated that magnetic systems structured on a nanometric length scale may exh...
The exchange bias effect was investigated, in the 5–300 K temperature range, in samples of IrMn [100...
Spin valve devices are composed by two magnetic (FM) regions separated by a nonmagnetic spacer: one ...
The scientific interest towards antiferromagnetic (AFM) materials has been increasing continuously m...
Magnetic properties of ferromagnetic/antiferromagnetic thin-films structures for spin-valve applicat...
The magnetothermal behavior of antiferromagnetic IrMn layers of different thickness (3, 6, 10 nm) h...
The scientific interest towards antiferromagnetic (AFM) materials has been increasing continuously m...
Ferromagnetic resonance FMR and magnetization MAG measurements were used to study the exchange inter...
The magnetothermal behavior of antiferromagnetic IrMn layers of different thickness (tAFM = 3, 6, 10...
Brillouin light scattering (BLS) was exploited to study the effect of the exchange coupling (EC) at ...
Brillouin light scattering (BLS) was exploited to study the effect of the exchange coupling (EC) at ...
Brillouin light scattering (BLS) was exploited to study the effect of the exchange coupling (EC) at ...
Brillouin light scattering (BLS) was exploited to study the spin wave properties of spin-valve (SV) ...
Nowadays, several advanced magnetic and magnetoelectronic devices rely on interface exchange couplin...
The study of the exchange bias (EB) interaction between ferromagnetic (FM) and antiferromagnetic (AF...
It is now largely demonstrated that magnetic systems structured on a nanometric length scale may exh...
The exchange bias effect was investigated, in the 5–300 K temperature range, in samples of IrMn [100...
Spin valve devices are composed by two magnetic (FM) regions separated by a nonmagnetic spacer: one ...
The scientific interest towards antiferromagnetic (AFM) materials has been increasing continuously m...
Magnetic properties of ferromagnetic/antiferromagnetic thin-films structures for spin-valve applicat...
The magnetothermal behavior of antiferromagnetic IrMn layers of different thickness (3, 6, 10 nm) h...
The scientific interest towards antiferromagnetic (AFM) materials has been increasing continuously m...
Ferromagnetic resonance FMR and magnetization MAG measurements were used to study the exchange inter...
The magnetothermal behavior of antiferromagnetic IrMn layers of different thickness (tAFM = 3, 6, 10...