Fundamental variability limits of filament-based RRAM
- Grossi, Alessandro
- Nowak, E.
- Zambelli, Cristian
- Pellissier, C.
- Bernasconi, S.
- Cibrario, G.
- Hajjam, K. El
- Crochemore, R.
- Nodin, J. F.
- Olivo, Piero
- Perniola, L.
Publication date
January 2016
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
While Resistive RAM (RRAM) are seen as an alternative to NAND Flash, their variability and cycling understanding remain a major roadblock. Extensive characterizations of multi-kbits RRAM arrays during Forming, Set, Reset and cycling operations are presented allowing the quantification of the intrinsic variability factors. As a result, the fundamental variability limits of filament-based RRAM in the full resistance range are identified
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