Electroluminescence from strained n-Ge quantum wells LEDs on Si 0.05Ge0.95 are demonstrated. Electroluminescence characterisation demonstrates two peaks around 1.55 μm and 1.8 μm, which correspond to transitions between the direct and indirect transitions respectively. © 2012 IEEE
The fabrication and characterisation of light emitting diode (LED) structures made of Ge grown on S...
The fabrication and characterisation of LED structures made of Ge grown on Si substrates is reported...
LEDs are reported from Ge-on-Si in which process induced strain has increased the emission wavelengt...
Electroluminescence from strained n-Ge quantum wells LEDs on Si 0.05Ge0.95 are demonstrated. Electro...
Electroluminescence from strained n-Ge quantum wells LEDs on Si0.05Ge0.95 are demonstrated. Electrol...
Electroluminescence from strained n-Ge quantum well light emitting diodes grown on a silicon substra...
Electroluminescence from strained n-Ge quantum well light emitting diodes grown on a silicon substra...
Direct band electroluminescence (EL) from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (M...
The fabrication and characterisation of light emitting diode (LED) structures made of Ge grown on Si...
The fabrication and characterisation of light emitting diode (LED) structures made of Ge grown on S...
The fabrication and characterisation of LED structures made of Ge grown on Si substrates is reported...
LEDs are reported from Ge-on-Si in which process induced strain has increased the emission wavelengt...
Electroluminescence from strained n-Ge quantum wells LEDs on Si 0.05Ge0.95 are demonstrated. Electro...
Electroluminescence from strained n-Ge quantum wells LEDs on Si0.05Ge0.95 are demonstrated. Electrol...
Electroluminescence from strained n-Ge quantum well light emitting diodes grown on a silicon substra...
Electroluminescence from strained n-Ge quantum well light emitting diodes grown on a silicon substra...
Direct band electroluminescence (EL) from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (M...
The fabrication and characterisation of light emitting diode (LED) structures made of Ge grown on Si...
The fabrication and characterisation of light emitting diode (LED) structures made of Ge grown on S...
The fabrication and characterisation of LED structures made of Ge grown on Si substrates is reported...
LEDs are reported from Ge-on-Si in which process induced strain has increased the emission wavelengt...