Surface sensitive electric current measurements are important experimental tools poorly corroborated by theoretical models. We show that the drift-diffusion equations offer a framework for a consistent description of such experiments. The current flow is calculated as a perturbation of an equilibrium solution depicting the space charge layer. We investigate the accumulation and inversion layers in great detail. Relying on numerical findings, we identify the proper length parameter, the relationship of which with the length of the space charge layer is not simple. If the length parameter is large enough, long-ranged modes dominate the Green's function of the current equation, leading to two-dimensional currents. In addition, we demonstrate t...
Residual currents were measured at an open circuit by connecting a columnar structured gold or plati...
In this Letter, we map for the first time the current distribution among the individual layers of mu...
The transient drift-diffusion model describing the charge transport in semiconductors is considered....
Time-domain current measurements are widely used to characterize semiconductor material properties, ...
http://deepblue.lib.umich.edu/bitstream/2027.42/6221/5/bac6798.0001.001.pdfhttp://deepblue.lib.umich...
The drift-diffusion equations of semiconductor physics, allowing for field-dependent drift velocitie...
Studying space-charge limited currents enables fundamental insight into the properties of charge car...
Using drift-diffusion simulations, we investigate the voltage dependence of the dark current in sing...
A theory is developed for diffusion-limited charge transfer on a non-fractally rough electrode. The ...
This analysis applies to a quasi-neutral region of uniformly doped semiconductor material. The objec...
Motivated by contact resistance on the front side of a crystalline silicon solar cell, we formulate ...
Knowledge of the nature of charge transfer processes at the semiconductor/electrolyte interface is c...
We study theoretically the propagation and distribution of electron spin density in semiconductors ...
We develop a perturbation formalism for diffusion accompanying the finite charge transfer rates on a...
The transient drift-diffusion model describing the charge transport in semiconductors is considered....
Residual currents were measured at an open circuit by connecting a columnar structured gold or plati...
In this Letter, we map for the first time the current distribution among the individual layers of mu...
The transient drift-diffusion model describing the charge transport in semiconductors is considered....
Time-domain current measurements are widely used to characterize semiconductor material properties, ...
http://deepblue.lib.umich.edu/bitstream/2027.42/6221/5/bac6798.0001.001.pdfhttp://deepblue.lib.umich...
The drift-diffusion equations of semiconductor physics, allowing for field-dependent drift velocitie...
Studying space-charge limited currents enables fundamental insight into the properties of charge car...
Using drift-diffusion simulations, we investigate the voltage dependence of the dark current in sing...
A theory is developed for diffusion-limited charge transfer on a non-fractally rough electrode. The ...
This analysis applies to a quasi-neutral region of uniformly doped semiconductor material. The objec...
Motivated by contact resistance on the front side of a crystalline silicon solar cell, we formulate ...
Knowledge of the nature of charge transfer processes at the semiconductor/electrolyte interface is c...
We study theoretically the propagation and distribution of electron spin density in semiconductors ...
We develop a perturbation formalism for diffusion accompanying the finite charge transfer rates on a...
The transient drift-diffusion model describing the charge transport in semiconductors is considered....
Residual currents were measured at an open circuit by connecting a columnar structured gold or plati...
In this Letter, we map for the first time the current distribution among the individual layers of mu...
The transient drift-diffusion model describing the charge transport in semiconductors is considered....