2016-2017 > Academic research: refereed > Publication in refereed journal201804_a bcmaVersion of RecordPublishe
HfTiN film was deposited by co-reactive sputtering and then was annealed in different gas ambients a...
A 9.77 nm HfO2 thin film has been deposited on Ge substrate by ALD method. Rapid Thermal Oxidation (...
Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as a channel material (o...
2016-2017 > Academic research: refereed > Publication in refereed journal201804_a bcmaVersion of Rec...
2017 2nd International Conference on Advanced Materials Research and Manufacturing Technologies, AMR...
Ge metal-oxide-semiconductor (MOS) capacitor with YON/LaON, as interface passivation layer (IPL), an...
Ge MOS capacitors with tri-layer gate dielectric are proposed by using GeON interlayer, TaON sandwic...
The electrical properties of n-Ge metal-oxide-semiconductor (MOS) capacitors with HfO 2 /LaON or HfO...
The paper reports that HfTiO dielectric is deposited by reactive co-sputtering of Hf and Ti targets ...
In this work, Ge p-MOS capacitors with HfTiON gate dielectric were fabricated by sputtering method. ...
TaON is in situ formed as a passivating interlayer in Ge metal-oxide-semiconductor (MOS) capacitors ...
Reactive cosputtering is employed to prepare high-permittivity HfTiO gate dielectric on n-Ge substra...
ZrON gate-dielectric GaAs metal-oxide-semiconductor capacitors with a LaSiON interfacial passivation...
The interfacial and electrical properties of sputtered Ti-incorporated Hf oxynitride on Ga2O3(Gd2O3)...
International audienceThe impact of different interfacial layers (ILs) on the electrical performance...
HfTiN film was deposited by co-reactive sputtering and then was annealed in different gas ambients a...
A 9.77 nm HfO2 thin film has been deposited on Ge substrate by ALD method. Rapid Thermal Oxidation (...
Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as a channel material (o...
2016-2017 > Academic research: refereed > Publication in refereed journal201804_a bcmaVersion of Rec...
2017 2nd International Conference on Advanced Materials Research and Manufacturing Technologies, AMR...
Ge metal-oxide-semiconductor (MOS) capacitor with YON/LaON, as interface passivation layer (IPL), an...
Ge MOS capacitors with tri-layer gate dielectric are proposed by using GeON interlayer, TaON sandwic...
The electrical properties of n-Ge metal-oxide-semiconductor (MOS) capacitors with HfO 2 /LaON or HfO...
The paper reports that HfTiO dielectric is deposited by reactive co-sputtering of Hf and Ti targets ...
In this work, Ge p-MOS capacitors with HfTiON gate dielectric were fabricated by sputtering method. ...
TaON is in situ formed as a passivating interlayer in Ge metal-oxide-semiconductor (MOS) capacitors ...
Reactive cosputtering is employed to prepare high-permittivity HfTiO gate dielectric on n-Ge substra...
ZrON gate-dielectric GaAs metal-oxide-semiconductor capacitors with a LaSiON interfacial passivation...
The interfacial and electrical properties of sputtered Ti-incorporated Hf oxynitride on Ga2O3(Gd2O3)...
International audienceThe impact of different interfacial layers (ILs) on the electrical performance...
HfTiN film was deposited by co-reactive sputtering and then was annealed in different gas ambients a...
A 9.77 nm HfO2 thin film has been deposited on Ge substrate by ALD method. Rapid Thermal Oxidation (...
Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as a channel material (o...
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