Charge effect in secondary electron emission from silicon surface induced by slow neon ions

<span style="color: rgb(51, 51, 51); font-family: arial, helvetica, sans-serif; font-size: 13px; line-height: 22px; background-color: rgb(248, 248, 248);">Total electron emission yield for impact of slow Neq+(q = 2, 4, 6, 8) ions with various kinetic energy under normal incidence on n-type Si has been measured. It is shown that for the same charge state, the total electron yield gamma increases linearly as the kinetic energy of projectile at impact increases, up to velocities corresponding to the &quot;classical&quot; threshold. Separation of kinetic electron yield gamma(KE) and potential electron yield gamma(PE) shows that gamma(PE) is proportional to the ion charge state and gamma(KE) increases linearly with projectile velocity. Finally, based on &quot;single hole without hopping&quot; hypothesis, the expression of the &quot;CRF&quot; F(q) is given, and the relation between gamma(KE) and q is obtained successfully for the first time, which is also a basis for judging whether the &quot;trampoline effect&quot; exists.