A device based on a PIN heterostructure with a quantum well in the intrinsic region is described. The main operation principle of the light emitting device is tested by calculating the electron and hole carrier densities in the quantum well. Dual wavelength emitter is produced using a device which is two back to back PIN. In the described device, choosing different wavelengths is achieved by undertaking different intermixing in a set of devices all now forward biased in the same way
Novel heterostructures in compound semiconductor light emitting devices have been investigated in or...
Article describes an experiment in which a hot-electron-enabled route to controlling light with diss...
The authors propose and demonstrate the integration of a quantum well intersub-band photodetector (Q...
We demonstrate the operation of a novel tunable wavelength surface emitting device. The device is ba...
A novel hot electron light emitter which has the potential to be used in the area of wavelength doma...
A new light-emitting device has been proposed based on the incorporation of a GaAs quantum well on t...
We present a structure which is capable of being fabricated into two distinct devices, both with con...
Further investigations on a hot electron barrier light emitter (HEBLE), which has a potential for us...
In this work, an InGaN/GaN multiple quantum well based Top-Hat Hot-Electron Light Emission and Lasin...
The Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure (HELLISH-1) device is a ...
The hot electron light emitting and lasing semiconductor heterostructure vertical cavity surface emi...
Hot electron light emitting and lasing in semiconductor heterostructures (HELLISH) is a longitudinal...
[[abstract]]Real-space transfer (RST) light-emitting transistors are implemented with a strained GaA...
The hot Electron Light Emission and Lasing in Semiconductor Heterostructure devices (HELLISH-1)is no...
The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is ...
Novel heterostructures in compound semiconductor light emitting devices have been investigated in or...
Article describes an experiment in which a hot-electron-enabled route to controlling light with diss...
The authors propose and demonstrate the integration of a quantum well intersub-band photodetector (Q...
We demonstrate the operation of a novel tunable wavelength surface emitting device. The device is ba...
A novel hot electron light emitter which has the potential to be used in the area of wavelength doma...
A new light-emitting device has been proposed based on the incorporation of a GaAs quantum well on t...
We present a structure which is capable of being fabricated into two distinct devices, both with con...
Further investigations on a hot electron barrier light emitter (HEBLE), which has a potential for us...
In this work, an InGaN/GaN multiple quantum well based Top-Hat Hot-Electron Light Emission and Lasin...
The Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure (HELLISH-1) device is a ...
The hot electron light emitting and lasing semiconductor heterostructure vertical cavity surface emi...
Hot electron light emitting and lasing in semiconductor heterostructures (HELLISH) is a longitudinal...
[[abstract]]Real-space transfer (RST) light-emitting transistors are implemented with a strained GaA...
The hot Electron Light Emission and Lasing in Semiconductor Heterostructure devices (HELLISH-1)is no...
The hot Electron Light Emission and Lasing in Semiconductor Heterostructures devices (HELLISH-1) is ...
Novel heterostructures in compound semiconductor light emitting devices have been investigated in or...
Article describes an experiment in which a hot-electron-enabled route to controlling light with diss...
The authors propose and demonstrate the integration of a quantum well intersub-band photodetector (Q...