A stripe-geometry InGaAsP/InP heterojunction bipolar transistor suitable for optical integration
- Chen, T. R.
- Zhuang, Y. H.
- Chang, B.
- Yi, M. B.
- Yariv, Amnon
Publication date
May 1987
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE) ISSN
0741-3106Abstract
A stripe-geometry InGaAsP/InP heterojunction bipolar transistor (HBT) was fabricated for the first time. High current gain (β > 500) and high collector current (I_c> 200 mA) were obtained in devices with an emitter-down configuration. The HBT was successfully integrated with a double-heterostructure (DH) laser, resulting in the first realization of laser operation in a vertical integration
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