We demonstrate a narrow-linewidth heterogeneously integrated silicon/III-V laser based on the oxide-confinement method. The laser achieves an output power of 4 mW and a linewidth of 28 kHz with a threshold current of 60 mA and a side mode suppression ratio of 50 dB at 1574 nm
Optoelectronic integration on silicon is an area of increasing interest for both physicists and the ...
We present a hybrid integrated InP-Si3N4 laser that generates frequency combs with a record-low intr...
We report a novel laser architecture, the silicon evanescent laser (SEL), that utilizes a silicon wa...
We demonstrate a narrow-linewidth heterogeneously integrated Si/III-V laser, where the current confi...
A heterogeneously integrated III-V-on-silicon laser is reported, integrating a III-V gain section, a...
Low noise lasers, with spectral linewidth of the kHz level and below, are in demand by an increasing...
Mode-locked lasers are useful for a variety of applications, such as sensing, telecommunication, and...
The wavelength region about of 1650 nm enables pervasive applications. Some instances include methan...
International audienceWith an ever-growing transmission data rate, electronic components reach a lim...
Generating optical combs in a small form factor is of utmost importance for a wide range of applicat...
Hybrid integration of semiconductor optical amplifiers with frequency-selective feedback circuits, i...
The optical properties of silicon materials have been recognized in recently years, and their applic...
III-V-on-silicon (III-V-on-Si) bonding has emerged as a viable way to integrate lasers with Si photo...
This paper reports on recent advances on integrated hybrid InP/SOI lasers and transmitters. Based on...
For the first time we demonstrate an anti-colliding mode-locked laser implemented on a III-V-on-sili...
Optoelectronic integration on silicon is an area of increasing interest for both physicists and the ...
We present a hybrid integrated InP-Si3N4 laser that generates frequency combs with a record-low intr...
We report a novel laser architecture, the silicon evanescent laser (SEL), that utilizes a silicon wa...
We demonstrate a narrow-linewidth heterogeneously integrated Si/III-V laser, where the current confi...
A heterogeneously integrated III-V-on-silicon laser is reported, integrating a III-V gain section, a...
Low noise lasers, with spectral linewidth of the kHz level and below, are in demand by an increasing...
Mode-locked lasers are useful for a variety of applications, such as sensing, telecommunication, and...
The wavelength region about of 1650 nm enables pervasive applications. Some instances include methan...
International audienceWith an ever-growing transmission data rate, electronic components reach a lim...
Generating optical combs in a small form factor is of utmost importance for a wide range of applicat...
Hybrid integration of semiconductor optical amplifiers with frequency-selective feedback circuits, i...
The optical properties of silicon materials have been recognized in recently years, and their applic...
III-V-on-silicon (III-V-on-Si) bonding has emerged as a viable way to integrate lasers with Si photo...
This paper reports on recent advances on integrated hybrid InP/SOI lasers and transmitters. Based on...
For the first time we demonstrate an anti-colliding mode-locked laser implemented on a III-V-on-sili...
Optoelectronic integration on silicon is an area of increasing interest for both physicists and the ...
We present a hybrid integrated InP-Si3N4 laser that generates frequency combs with a record-low intr...
We report a novel laser architecture, the silicon evanescent laser (SEL), that utilizes a silicon wa...
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