The behaviour of grounded coplanar waveguide (GCPW) structures in the upper millimeter-wave range is analyzed by using full-wave electromagnetic (EM) simulations. A methodological approach to develop reliable and time-efficient simulations is proposed by investigating the impact of different simplifications in the EM modelling and simulation conditions. After experimental validation with measurements on test structures, this approach has been used to model the most critical passive structures involved in the layout of a state-of-the-art 200-GHz power amplifier based on metamorphic high electron mobility transistors (mHEMTs). This millimeter-wave monolithic integrated circuit (MMIC) has demonstrated a measured output power of 8.7 dBm for an ...
International audienceThis paper describes the techniques to design a SiGe power amplifier (PA) for ...
A compact H-band (220-325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier h...
This paper reports on the first stacked field-effect transistor (stacked-FET) submillimeter-wave mon...
Using three dimensional (3-D) electromagnetic (EM) field simulations, a fully scalable grounded copl...
A balanced amplifier has been designed and fabricated. The monolithic millimeter-wave integrated cir...
The reliable and efficient design of monolithic millimetre-wave integrated circuits (MMICs) mandates...
The high millimeter-wave (mmW) frequency range offers new possibilities for high-resolution imaging ...
This work investigates the problem of spurious mode propagation in a grounded coplanar waveguide (GC...
This paper investigates an improved empirical model predicting the propagation characteristics of co...
A driver amplifier operating at 200 GHz has been design and manufactured with compact size, high gai...
In this paper, a balanced millimeter-wave monolithic integrated circuit (MMIC) medium power amplifie...
A scalable approach to the modeling of millimeter- wave field-effect transistors is presented in thi...
It is well known that mm-waves have an important role to play in the rapid expansion of mobile and p...
International audienceThis paper describes the techniques to design a SiGe power amplifier (PA) for ...
Abstract — A comprehensive modelling approach is ap-plied to the study of power pHEMT devices for h...
International audienceThis paper describes the techniques to design a SiGe power amplifier (PA) for ...
A compact H-band (220-325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier h...
This paper reports on the first stacked field-effect transistor (stacked-FET) submillimeter-wave mon...
Using three dimensional (3-D) electromagnetic (EM) field simulations, a fully scalable grounded copl...
A balanced amplifier has been designed and fabricated. The monolithic millimeter-wave integrated cir...
The reliable and efficient design of monolithic millimetre-wave integrated circuits (MMICs) mandates...
The high millimeter-wave (mmW) frequency range offers new possibilities for high-resolution imaging ...
This work investigates the problem of spurious mode propagation in a grounded coplanar waveguide (GC...
This paper investigates an improved empirical model predicting the propagation characteristics of co...
A driver amplifier operating at 200 GHz has been design and manufactured with compact size, high gai...
In this paper, a balanced millimeter-wave monolithic integrated circuit (MMIC) medium power amplifie...
A scalable approach to the modeling of millimeter- wave field-effect transistors is presented in thi...
It is well known that mm-waves have an important role to play in the rapid expansion of mobile and p...
International audienceThis paper describes the techniques to design a SiGe power amplifier (PA) for ...
Abstract — A comprehensive modelling approach is ap-plied to the study of power pHEMT devices for h...
International audienceThis paper describes the techniques to design a SiGe power amplifier (PA) for ...
A compact H-band (220-325 GHz) submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier h...
This paper reports on the first stacked field-effect transistor (stacked-FET) submillimeter-wave mon...