This research developed a framework which analyzes circuit-level reliability and evaluates the lifetimes of complex systems like state-of-art microprocessors. The novelty of the proposed work lies on its statistical timing analyzer and the ability to handle the combined effect of a variety of front-end-of-line (FEOL) wearout mechanisms, while including both the manufacturing process variability and the real-time uncertainties in workload and ambient conditions like operating temperature and IR drops. Overall, the proposed framework presents the correlation between circuit performance (speed) and circuit lifetime, which enables circuit designers to avoid excessive guard-banding, by using a better understood reliability budget to achieve high...
The reliability variation simulation methodology for advanced integrated circuit (IC) design is pres...
Aggressive CMOS technology feature size scaling has been going on for the past decades, while the su...
Reliability has always been an issue in silicon device engineering, but until now it has been manage...
As technology scaling enters the nanometer regime, device aging effects cause quality and reliabilit...
Continuous shrinking of design window for circuit reliability requires more accurate aging simulatio...
Current and future semiconductor technology nodes, bring about a variety of challenges that pertain ...
Paper presented at the 2017 IEEE International Symposium on Circuits and Systems (ISCAS), held in Ba...
This paper discusses an efficient method to analyze the spatial and temporal reliability of analog a...
Abstract—Circuit reliability is affected by various fabrication-time and run-time effects. Fabricati...
The reliability variation simulation methodology for advanced integrated circuit (IC) design is pres...
Current and future semiconductor technology nodes, bring about a variety of challenges that pertain ...
In nano-scale CMOS technology, circuit reliability is a growing concern for complicated digital circ...
The integration of millions of transistors on a single chip is possible due to rapid scaling of CMOS...
The introduction of High-κ Metal Gate transistors led to higher integration density, low leakage cur...
A reliability simulator for traditional gate oxide time dependent dielectric breakdown (TDDB) and th...
The reliability variation simulation methodology for advanced integrated circuit (IC) design is pres...
Aggressive CMOS technology feature size scaling has been going on for the past decades, while the su...
Reliability has always been an issue in silicon device engineering, but until now it has been manage...
As technology scaling enters the nanometer regime, device aging effects cause quality and reliabilit...
Continuous shrinking of design window for circuit reliability requires more accurate aging simulatio...
Current and future semiconductor technology nodes, bring about a variety of challenges that pertain ...
Paper presented at the 2017 IEEE International Symposium on Circuits and Systems (ISCAS), held in Ba...
This paper discusses an efficient method to analyze the spatial and temporal reliability of analog a...
Abstract—Circuit reliability is affected by various fabrication-time and run-time effects. Fabricati...
The reliability variation simulation methodology for advanced integrated circuit (IC) design is pres...
Current and future semiconductor technology nodes, bring about a variety of challenges that pertain ...
In nano-scale CMOS technology, circuit reliability is a growing concern for complicated digital circ...
The integration of millions of transistors on a single chip is possible due to rapid scaling of CMOS...
The introduction of High-κ Metal Gate transistors led to higher integration density, low leakage cur...
A reliability simulator for traditional gate oxide time dependent dielectric breakdown (TDDB) and th...
The reliability variation simulation methodology for advanced integrated circuit (IC) design is pres...
Aggressive CMOS technology feature size scaling has been going on for the past decades, while the su...
Reliability has always been an issue in silicon device engineering, but until now it has been manage...