Coatings of Group IIA metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula (I) where M is a Group IIA metal, preferably magnesium, calcium, strontium, or barium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula I is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as barium selenide can be deposited from a barium compound of formula I and a heat decomposable selenium compound under...
Abstract- The influence of precursor structure and reactivity on properties of compound semiconducto...
[[abstract]]A series of organometallic complexes of the general formula [M(CO).sub.2 L.sub.2 ] was p...
Developing novel vapor precursors for vapor depositions such as atomic layer deposition (ALD) is cri...
Coatings of Group IB metals are formed by chemical vapor deposition, in which a heat decomposable or...
Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in whic...
Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic lay...
A new class of Group II bis(oligoetherthiolate) compounds is described for use in chemical vapor dep...
textWith the growing demand for miniaturization of devices and for new materials with useful propert...
A method for applying a metal film barrier layer between a substrate and a superconductor coating or...
A protocol has been devised for formulating low-vapor-pressure precursors for protective and convers...
Atomic Layer Deposition of Aluminum Metal Films Using a Thermally Stable Aluminum Hydride Reducing A...
A protocol has been devised for formulating low-vapor-pressure precursors for protective and convers...
An organometallic precursor is provided. The precursor corresponds in structure to Formula I: Cp(R)....
Chemical vapor deposition (CVD) and atomic layer deposition (ALD) are corner-stone techniques for de...
The state of the art in research and application of processes of chemical vapour deposition of noble...
Abstract- The influence of precursor structure and reactivity on properties of compound semiconducto...
[[abstract]]A series of organometallic complexes of the general formula [M(CO).sub.2 L.sub.2 ] was p...
Developing novel vapor precursors for vapor depositions such as atomic layer deposition (ALD) is cri...
Coatings of Group IB metals are formed by chemical vapor deposition, in which a heat decomposable or...
Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in whic...
Methods of forming thin metal-containing films by chemical phase deposition, particularly atomic lay...
A new class of Group II bis(oligoetherthiolate) compounds is described for use in chemical vapor dep...
textWith the growing demand for miniaturization of devices and for new materials with useful propert...
A method for applying a metal film barrier layer between a substrate and a superconductor coating or...
A protocol has been devised for formulating low-vapor-pressure precursors for protective and convers...
Atomic Layer Deposition of Aluminum Metal Films Using a Thermally Stable Aluminum Hydride Reducing A...
A protocol has been devised for formulating low-vapor-pressure precursors for protective and convers...
An organometallic precursor is provided. The precursor corresponds in structure to Formula I: Cp(R)....
Chemical vapor deposition (CVD) and atomic layer deposition (ALD) are corner-stone techniques for de...
The state of the art in research and application of processes of chemical vapour deposition of noble...
Abstract- The influence of precursor structure and reactivity on properties of compound semiconducto...
[[abstract]]A series of organometallic complexes of the general formula [M(CO).sub.2 L.sub.2 ] was p...
Developing novel vapor precursors for vapor depositions such as atomic layer deposition (ALD) is cri...