A study of non-infrared-active hydrogen bonding in a-Si:H thin film using combined calibrated temperature desorption spectroscopy and FTIR

Non-infrared-active hydrogen bonding species were investigated by analyzing the infrared spectra and the calibrated temperature desorption spectroscopy (CTDS) spectra of hydrogen released during degassing of hydrogenated amorphous silicon thin films. Samples were degassed gradually using a linear temperature ramp (0.5°C/s). Each stage corresponds to a temperature at which the hydrogen effusion peaks can be found (∼340°C, ∼500°C and ∼610°C). Differences in the amounts of hydrogen obtained from the FTIR spectra and the CTDS measurement correspond to the non-infrared-active, occluded hydrogen