V2O5/4H-SiC Schottky diode as a high performance PTAT sensor
- Pangallo, G.
- Rao, S.
- Della Corte, F. G.
- DI BENEDETTO, LUIGI
- RUBINO, Alfredo
Publication date
January 2016
DOI Publisher
Institute of Electrical and Electronics Engineers Inc.Abstract
A proportional to absolute temperature sensor (PTAT) based on V2O5/4H-SiC (divanadium pentoxide/4H polytype of silicon carbide) Schottky diodes is presented. The linear dependence between the voltage differences across two constant-current forward biased diodes on temperature has been used for thermal sensing in the wide temperature range from T=147 K up to 400 K. A sensitivity of 307 μV/K was calculated for two constant bias currents, ID1=16 μA and ID2=608 μA
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