Photomixing and Photoconductive THz generation improvement in SI-GaAs after Carbon Irradiation
- Deshmukh, P.
- Singh, A.
- Pal, S.
- Prabhu, S.
- Mathimalar, S.
- Nanal, V.
- Pillay, R.
- Doehler, G.
- Mendez-Aller, M.
- Preu, S.
Publication date
January 2015
DOIAbstract
We report significant improvement in pulsed and continuous wave (CW) THz generation when semi insulating GaAs (SI-GaAs) is irradiated with carbon ions. Irradiation reduces the carrier lifetime in SI-GaAs and increases its resistivity. This results in reduced screening effects and lesser heat dissipation in the THz pulse emitter. Reduced lifetime significantly improves the bandwidth of the CW THz system
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