Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain

The quest for low power becomes highly compelling in newly emerging application areas related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime (i.e., near the OFF state) at low supply voltages (400) that was both bias and geometry independent. The transistor reported here is useful for sensor interface circuits in wearable devices where high current sensitivity and ultralow power are vital for battery-less operation.We thank EPSRC under Project EP/M013650/1, EU under Projects DOMINO 645760 , ORAMA 246334 , 1D-NEON 685758-2 and BET-U 692373 , and Danbond under Project 69191 for the generous support