Structural characterization of amorphised InAs with synchrotron radiation

Extended X-ray absorption fine structure measurements have been utilized to determine the structural parameters of InAs amorphised by ion implantation. Relative to crystalline standards, increases in bond length and Debye-Walter factor were apparent. Our results indicate that a total coordination number of four atoms, as observed in the crystalline phase, is retained in the amorphous material. Furthermore, homopolar bonding, forbidden in the crystalline phase, is present in the amorphous material and, apparently, in amorphous III-V semiconductors in general