We observe spin-valve-like effects in nanoscaled thermally evaporated Co/AlO x /Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode with respect to the current direction. We attribute this effect to a two-step magnetization reversal and an anisotropic density of states resulting from spin-orbit interaction. The results of this study points to future applications of novel spintronics devices involving only one ferromagnetic layer
We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/...
Tunneling anisotropic magnetoresistance (TAMR) is observed in tunnel junctions with transition metal...
The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel ju...
A new approach in spintronics is based on spin-polarized charge transport phenomena governed by anti...
International audienceWe present a theory of the anisotropy of tunneling magnetoresistance (ATMR) ph...
C 60 fullerenes are interesting molecular semiconductors for spintronics since they exhibit weak s...
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxia...
In the context of studying magnetic and spintronics phenomena occurring at the nanoscale, we investi...
Schebaum O, Fabretti S, Moodera JS, Thomas A. Spin-polarized tunneling in MgO-based tunnel junctions...
We report on magnetoresistance (MR) studies on CoAl OX Au and CoAl OX NiAu magnetic tunnel junctions...
We theoretically investigate the tunneling anisotropic magneto-Seebeck effect in a realistically mod...
International audienceMagnetization reversal in sputtered Co and oxidized Co ͑CoOx͒ layers are studi...
We investigate the tunneling anisotropic magnetoresistance (TAMR) in thick hcp Co films at cryogenic...
Tunneling anisotropic magnetoresistance (TAMR) is the difference in resistance of a magnetic tunnel ...
The ballistic conductance of Fe/MgO/Fe magnetic tunnel junctions depends significantly on the direct...
We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/...
Tunneling anisotropic magnetoresistance (TAMR) is observed in tunnel junctions with transition metal...
The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel ju...
A new approach in spintronics is based on spin-polarized charge transport phenomena governed by anti...
International audienceWe present a theory of the anisotropy of tunneling magnetoresistance (ATMR) ph...
C 60 fullerenes are interesting molecular semiconductors for spintronics since they exhibit weak s...
We report the observation of tunneling anisotropic magnetoresistance effect (TAMR) in the epitaxia...
In the context of studying magnetic and spintronics phenomena occurring at the nanoscale, we investi...
Schebaum O, Fabretti S, Moodera JS, Thomas A. Spin-polarized tunneling in MgO-based tunnel junctions...
We report on magnetoresistance (MR) studies on CoAl OX Au and CoAl OX NiAu magnetic tunnel junctions...
We theoretically investigate the tunneling anisotropic magneto-Seebeck effect in a realistically mod...
International audienceMagnetization reversal in sputtered Co and oxidized Co ͑CoOx͒ layers are studi...
We investigate the tunneling anisotropic magnetoresistance (TAMR) in thick hcp Co films at cryogenic...
Tunneling anisotropic magnetoresistance (TAMR) is the difference in resistance of a magnetic tunnel ...
The ballistic conductance of Fe/MgO/Fe magnetic tunnel junctions depends significantly on the direct...
We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/...
Tunneling anisotropic magnetoresistance (TAMR) is observed in tunnel junctions with transition metal...
The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel ju...