Au nanoparticles are commonly used as seeds for epitaxial growth of III-V semiconductor nanowires. However, the interaction between Au and In-containing III-V materials makes it difficult to control the growth of more complex nanowire structures in materials such as InAs. Here we report the growth of InAs nanowires and branched nanotrees using Au and Au-In nanoparticles. We show that the initial composition of the particle does not affect the morphology of the first-generation nanowires, nor does it affect the final composition of the particle after growth. However, when the Au-In particles were used to seed a second generation of nanowires, producing nanotrees, the branches exhibited a 2-3 times higher growth rate and more regular shape th...
AbstractIn this work, the nucleation and growth of InAs nanowires on patterned SiO2/Si(111) substrat...
III-V ternary nanowires are interesting due to the possibility of modulating their physical and mate...
Growth of III-V semiconductor nanowires is generally assisted by a liquid particle in order to get a...
Semiconducting nanowires have attracted scientific attention for more than 20 years due to their pot...
Controllable particle assisted growth (PAG) of III-V nanowires is today almost exclusively done with...
We present results on the effect of seed particle reconfiguration on the growth of short InAs and In...
III-V semiconductor nanowires have attracted extensive research interests over the past few decades ...
The integration of III-V semiconductors with Si in device fabrication is facilitated by the use of n...
Epitaxially-grown InAs nanowires may have great potential for nanowire device applications, due to t...
The integration of III–V semiconductors with Si in device fabrication is facilitated by the use of n...
We have studied the nucleation and growth of InAs nanowires (NWs) on SiO2/Si substrates by organomet...
To observe the axial growth behavior of InAs on GaAs nanowires, InAs was grown for different growth ...
Branched nanowire heterostructures of InAsGaAs were observed during Au-assisted growth of InAs on Ga...
Anisotropy in crystal growth of III-V semiconductor nanowires can be enhanced by the assistance of a...
We demonstrate here a method for controlled production of complex self-assembled three-dimensional n...
AbstractIn this work, the nucleation and growth of InAs nanowires on patterned SiO2/Si(111) substrat...
III-V ternary nanowires are interesting due to the possibility of modulating their physical and mate...
Growth of III-V semiconductor nanowires is generally assisted by a liquid particle in order to get a...
Semiconducting nanowires have attracted scientific attention for more than 20 years due to their pot...
Controllable particle assisted growth (PAG) of III-V nanowires is today almost exclusively done with...
We present results on the effect of seed particle reconfiguration on the growth of short InAs and In...
III-V semiconductor nanowires have attracted extensive research interests over the past few decades ...
The integration of III-V semiconductors with Si in device fabrication is facilitated by the use of n...
Epitaxially-grown InAs nanowires may have great potential for nanowire device applications, due to t...
The integration of III–V semiconductors with Si in device fabrication is facilitated by the use of n...
We have studied the nucleation and growth of InAs nanowires (NWs) on SiO2/Si substrates by organomet...
To observe the axial growth behavior of InAs on GaAs nanowires, InAs was grown for different growth ...
Branched nanowire heterostructures of InAsGaAs were observed during Au-assisted growth of InAs on Ga...
Anisotropy in crystal growth of III-V semiconductor nanowires can be enhanced by the assistance of a...
We demonstrate here a method for controlled production of complex self-assembled three-dimensional n...
AbstractIn this work, the nucleation and growth of InAs nanowires on patterned SiO2/Si(111) substrat...
III-V ternary nanowires are interesting due to the possibility of modulating their physical and mate...
Growth of III-V semiconductor nanowires is generally assisted by a liquid particle in order to get a...