The luminescence polarization properties of GaInP islands have been investigated. The islands, which form during overgrowth of InP quantum dots, were studied using scanning tunneling luminescence (STL) and photoluminescence (PL). STL from these islands shows emission at an energy below the main emission peak of the bulk GaInP. The linear PL polarization anisotropy was measured at low temperature, for which the emission from the islands shows high polarization anisotropy. The intensity maximum for the emission occurs for light polarized parallel to the elongation of the islands. The observed linear PL polarization anisotropy indicates the presence of highly ordered domains of GaInP in the islands. (C) 2003 American Institute of Physics
Scanning tunneling microscopy induced luminescence (STML) has been used to investigate individual se...
Surface and edge emission polarization properties of samples containing four InAs/InGaAsP/InP quantu...
The strain of self‐organized InP islands is used to induced quantum dots in near‐surface GaInP/AlGaI...
We report on the optical characterization of site-controlled InP/GaInP quantum dots (QDs). Spatially...
We report on the optical characterization of site-controlled InP/GaInP quantum dots (QDs). Spatially...
This thesis treats scanning tunneling luminescence (STL) investigations of semiconductor nanostructu...
This content may be downloaded for personal use only. Any other use requires prior permission of the...
We report on the shape and polarization control of site-controlled multiple and single InAs quantum ...
We report on the shape and polarization control of site-controlled multiple and single InAs quantum ...
We report on the shape and polarization control of site-controlled multiple and single InAs quantum ...
Thin layers of GaxIn1-xP grown on top of self-assembled InP quantum dots has been studied using tran...
Excitonic emission from single InAs/InGaAlAs/InP quantum dashes has been investigated in the context...
Polarization sensitive photoluminescence is performed on single non-polar InGaN quantum dots. The st...
We present results on the polarization-resolved photoluminescence emitted from InGaAs/AlGaAs single ...
We have investigated the electronic structure of excitons in InP quantum dots in GaInP. The exciton ...
Scanning tunneling microscopy induced luminescence (STML) has been used to investigate individual se...
Surface and edge emission polarization properties of samples containing four InAs/InGaAsP/InP quantu...
The strain of self‐organized InP islands is used to induced quantum dots in near‐surface GaInP/AlGaI...
We report on the optical characterization of site-controlled InP/GaInP quantum dots (QDs). Spatially...
We report on the optical characterization of site-controlled InP/GaInP quantum dots (QDs). Spatially...
This thesis treats scanning tunneling luminescence (STL) investigations of semiconductor nanostructu...
This content may be downloaded for personal use only. Any other use requires prior permission of the...
We report on the shape and polarization control of site-controlled multiple and single InAs quantum ...
We report on the shape and polarization control of site-controlled multiple and single InAs quantum ...
We report on the shape and polarization control of site-controlled multiple and single InAs quantum ...
Thin layers of GaxIn1-xP grown on top of self-assembled InP quantum dots has been studied using tran...
Excitonic emission from single InAs/InGaAlAs/InP quantum dashes has been investigated in the context...
Polarization sensitive photoluminescence is performed on single non-polar InGaN quantum dots. The st...
We present results on the polarization-resolved photoluminescence emitted from InGaAs/AlGaAs single ...
We have investigated the electronic structure of excitons in InP quantum dots in GaInP. The exciton ...
Scanning tunneling microscopy induced luminescence (STML) has been used to investigate individual se...
Surface and edge emission polarization properties of samples containing four InAs/InGaAsP/InP quantu...
The strain of self‐organized InP islands is used to induced quantum dots in near‐surface GaInP/AlGaI...