In this paper a new approach to a laser-produced plasma EUV source based on a tin target is presented. A thin layer of pure tin and composite layers consisting of Sn with Si, SiO and LiF are investigated. The target composed of several thin layers produces less debris than the other targets and provides a conversion efficiency (CE) in the 13.5-nm +/- 1% band at least comparable to the CE for the pure tin slab target. The largest CE was observed for the target composed of a mixture of Sn and LiF, due to the fact that lithium, similarly to tin, is a strong emitter at 13.5 nm
This paper describes lithium–tin alloys as a novel target material to enhance the efficiency of 13.5...
Hydrogen-like line emission from lithium has long been considered a candidate for EUV light source f...
Extreme ultraviolet lithography(EUVL) is being developed worldwide as the next generation technology...
One of the key leverage factors in determining the viability of laser-plasma sources for EUVL is the...
We have previously proposed the use of mass-limited, tin-containing laser plasma sources for EUV lit...
EUV lithography requires a high-efficiency light source at 13nm that is free from debris. Our mass-l...
Light sources based on laser plasmas using tin as target material are known to provide high conversi...
We have previously reported encouraging results with a new type of laser plasma source. As a radiati...
Properties of extreme ultraviolet (EUV) and particle emissions from laser-produced tin (Sn) plasma w...
An overview is given of the progress in the studies on a tin material limited-mass target which has ...
High EUV source power has been demonstrated with a laser-plasma source exhibiting low debris and hig...
The work presented in this thesis is primarily concerned with the optimisation of extreme ultraviole...
Extreme ultraviolet (EUV) nanolithography relies on CO2-lasers to drive EUV-emitting tin plasma at 1...
This paper describes lithium–tin alloys as a novel target material to enhance the efficiency of 13.5...
Hydrogen-like line emission from lithium has long been considered a candidate for EUV light source f...
Extreme ultraviolet lithography(EUVL) is being developed worldwide as the next generation technology...
One of the key leverage factors in determining the viability of laser-plasma sources for EUVL is the...
We have previously proposed the use of mass-limited, tin-containing laser plasma sources for EUV lit...
EUV lithography requires a high-efficiency light source at 13nm that is free from debris. Our mass-l...
Light sources based on laser plasmas using tin as target material are known to provide high conversi...
We have previously reported encouraging results with a new type of laser plasma source. As a radiati...
Properties of extreme ultraviolet (EUV) and particle emissions from laser-produced tin (Sn) plasma w...
An overview is given of the progress in the studies on a tin material limited-mass target which has ...
High EUV source power has been demonstrated with a laser-plasma source exhibiting low debris and hig...
The work presented in this thesis is primarily concerned with the optimisation of extreme ultraviole...
Extreme ultraviolet (EUV) nanolithography relies on CO2-lasers to drive EUV-emitting tin plasma at 1...
This paper describes lithium–tin alloys as a novel target material to enhance the efficiency of 13.5...
Hydrogen-like line emission from lithium has long been considered a candidate for EUV light source f...
Extreme ultraviolet lithography(EUVL) is being developed worldwide as the next generation technology...