III/V MOS transistors are currently attracting considerable attention. The main driving force is that the advantageous transport properties in III/V materials are expected to increase the drive current in the MOS transistors. Major challenges for the III/V MOS technologies include the growth of high-quality III/V materials oil Si Substrates and the control of the MOS interface. Using the nanowire technology, we have recently demonstrated enhancement mode operation of 50 nm L-g InAs nanowire wrap-gate transistors in a vertical configuration. They demonstrate a transconductance of 0.5 S/mm, an inverse sub-threshold slope of about 80 mV/dec., and an I-on/I-off ratio > 1000 for a drive voltage of V-d=0.5 V. These results show promise for the us...
Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic de...
III-V MOSFETs provide improved electrostatic control at scaled gate lengths combined with a consider...
We demonstrate a wrap-gated field effect transistor based on a matrix of vertically standing InAs na...
III/V MOS transistors are currently attracting considerable attention. The main driving force is tha...
This paper describes the properties and performance status of vertical III-V nanowire transistors. T...
III-V MOSFETs are candidates for extension of the scaling roadmap beyond 10 nm. In the vertical dire...
Field-effect transistors (FETs) based on semiconductor nanowires (Bryllert et al., 2005) have the po...
Recent decades have seen an exponential increase in the functionality of electronic circuits, allowi...
In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs ...
This thesis explores several novel material systems and innovative device concepts enabled by nanowi...
In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs ...
In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs ...
III-V MOSFETs are currently being considered for digital applications, whereas the option to develop...
Since the introduction of the transistor and the integrated circuit, the semiconductor industry has ...
Silicon nanowires have received considerable attention as transistor components because they represe...
Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic de...
III-V MOSFETs provide improved electrostatic control at scaled gate lengths combined with a consider...
We demonstrate a wrap-gated field effect transistor based on a matrix of vertically standing InAs na...
III/V MOS transistors are currently attracting considerable attention. The main driving force is tha...
This paper describes the properties and performance status of vertical III-V nanowire transistors. T...
III-V MOSFETs are candidates for extension of the scaling roadmap beyond 10 nm. In the vertical dire...
Field-effect transistors (FETs) based on semiconductor nanowires (Bryllert et al., 2005) have the po...
Recent decades have seen an exponential increase in the functionality of electronic circuits, allowi...
In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs ...
This thesis explores several novel material systems and innovative device concepts enabled by nanowi...
In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs ...
In this letter, the authors demonstrate a vertical wrap-gated field-effect transistor based on InAs ...
III-V MOSFETs are currently being considered for digital applications, whereas the option to develop...
Since the introduction of the transistor and the integrated circuit, the semiconductor industry has ...
Silicon nanowires have received considerable attention as transistor components because they represe...
Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic de...
III-V MOSFETs provide improved electrostatic control at scaled gate lengths combined with a consider...
We demonstrate a wrap-gated field effect transistor based on a matrix of vertically standing InAs na...