A Class-AB 1.65GHz-2GHz Broadband CMOS Medium Power Amplifier

In this paper a single stage broadband CMOS RF power amplifier is presented. The power amplifier is fabricated in a 0:25¹m CMOS process. Measurements with a 2:5V supply voltage show an output power of 18:5 dBm with an associated PAE of 16% at the 1-dB compression point. The measured gain is 5.1 § 0:5 dB from 1.65 to 2 GHz. Simulated and measured results agree reasonably well