Results of electrical characterization of Au nucleated InAs1-xSbx nanowires grown by molecular beam epitaxy are reported. An almost doubling of the extracted field effect mobility compared to reference InAs nanowires is observed for a Sb content of x = 0.13. Pure InSb nanowires on the other hand show considerably lower, and strongly diameter dependent, mobility values. Finally, InAs of wurtzite crystal phase overgrown with an InAs1-xSbx shell is found to have a substantial positive shift in threshold voltage compared to reference nanowires. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726037
Understanding the electrical properties of defect-free nanowires with different structures and their...
Nanowires are widely considered to be key elements in future disruptive electronics and photonics. T...
This work deals with the growth by Chemical Beam Epitaxy and the structural study by Scanning and Tr...
Results of electrical characterization of Au nucleated InAs1-xSbx nanowires grown by molecular beam ...
Results of electrical characterization of Au nucleated InAs₁ˍₓSbₓnanowiresgrown by molecular beam ep...
We report the growth of InAs1−xSbx nanowires (0 ≤ x ≤ 0.15) grown by catalyst-free molec-ular beam e...
We report the growth of InAs<sub>1–<i>x</i></sub>Sb<sub><i>x</i></sub> nanowires (0 ≤ <i>x</i> ≤ 0.1...
Semiconductor nanowires are grown using chemical beam epitaxy and metal organic vapor phase epitaxy ...
We report a systematic study on the correlation of the electrical transport properties with the crys...
We demonstrate metalorganic vapor phase epitaxy of InAs1-xSbx nanowires (x=0.08-0.77) for applicatio...
We present the growth of homogeneous InAs1-xPx nanowires as well as InAs1-xPx heterostructure segmen...
We report the growth of InAs/InAs1-xSbx single and double heterostructured nanowires by Au-assisted ...
The electrical and structural properties of 111B-oriented InAs nanowires grown using metal-organic p...
The conductivity and crystal structure of nominally undoped InAs nanowires deposited by three differ...
Molecular‐beam epitaxy has been successfully used to grow InAsxSb1−x on InP substrates with good ele...
Understanding the electrical properties of defect-free nanowires with different structures and their...
Nanowires are widely considered to be key elements in future disruptive electronics and photonics. T...
This work deals with the growth by Chemical Beam Epitaxy and the structural study by Scanning and Tr...
Results of electrical characterization of Au nucleated InAs1-xSbx nanowires grown by molecular beam ...
Results of electrical characterization of Au nucleated InAs₁ˍₓSbₓnanowiresgrown by molecular beam ep...
We report the growth of InAs1−xSbx nanowires (0 ≤ x ≤ 0.15) grown by catalyst-free molec-ular beam e...
We report the growth of InAs<sub>1–<i>x</i></sub>Sb<sub><i>x</i></sub> nanowires (0 ≤ <i>x</i> ≤ 0.1...
Semiconductor nanowires are grown using chemical beam epitaxy and metal organic vapor phase epitaxy ...
We report a systematic study on the correlation of the electrical transport properties with the crys...
We demonstrate metalorganic vapor phase epitaxy of InAs1-xSbx nanowires (x=0.08-0.77) for applicatio...
We present the growth of homogeneous InAs1-xPx nanowires as well as InAs1-xPx heterostructure segmen...
We report the growth of InAs/InAs1-xSbx single and double heterostructured nanowires by Au-assisted ...
The electrical and structural properties of 111B-oriented InAs nanowires grown using metal-organic p...
The conductivity and crystal structure of nominally undoped InAs nanowires deposited by three differ...
Molecular‐beam epitaxy has been successfully used to grow InAsxSb1−x on InP substrates with good ele...
Understanding the electrical properties of defect-free nanowires with different structures and their...
Nanowires are widely considered to be key elements in future disruptive electronics and photonics. T...
This work deals with the growth by Chemical Beam Epitaxy and the structural study by Scanning and Tr...