Strained nanowires with varying InAs/InP core/shell thicknesses were grown using Chemical Beam Epitaxy. Microphotoluminescence spectroscopy, performed at low temperature, was then used to study the optical properties of single wires. Emission from the InAs core was observed and its dependence on the shell thickness/core diameter ratio was investigated. We found that it is possible to tune the emission energy towards 0.8 eV by controlling this ratio. We have compared the measured energies with calculated energies. Our findings are consistent with the wires having a hexagonal crystal structure. (c) 2005 Elsevier B.V. All rights reserved
We report on growth of InP-InAs core-shell nanowires and demonstration of the formation of single qu...
We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAs...
The fabrication of core-shell structures is crucial for many nanowire device concepts. For the prope...
Strained nanowires with varying InAs/InP core/shell thicknesses were grown using Chemical Beam Epita...
We report the detection of quantum confinement in single InAs-InP core shell nanowires. The wires, h...
We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAs...
Correlated micro-photoluminescence (μPL) and cathodoluminescence (CL) measurements are reported for ...
The structural and optical properties of high-quality crystalline strained InP nanowires are reporte...
The mechanical, optical, and electrical properties of III-V semiconductor heterostructures are inves...
This thesis describes growth, processing, characterization and photoluminescence (PL) spectroscopy o...
We have synthesized GaAs-GaxIn1-xP (0.34 < x < 0.69) core-shell nanowires by metal-organic vapor pha...
This thesis describes optical spectroscopy on III-V semiconductor nanowires. The nanowires were grow...
InP-InAs-InP multi-shell nanowires (NWs) were grown in the wurtzite (WZ) or zincblende (ZB) crystal ...
In this letter, we demonstrate that a significant improvement of optical performance of InAs nanowir...
2 páginas, 2 figuras.-- Trabajo presentado a la XIIth International Conference on Molecular Beam Epi...
We report on growth of InP-InAs core-shell nanowires and demonstration of the formation of single qu...
We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAs...
The fabrication of core-shell structures is crucial for many nanowire device concepts. For the prope...
Strained nanowires with varying InAs/InP core/shell thicknesses were grown using Chemical Beam Epita...
We report the detection of quantum confinement in single InAs-InP core shell nanowires. The wires, h...
We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAs...
Correlated micro-photoluminescence (μPL) and cathodoluminescence (CL) measurements are reported for ...
The structural and optical properties of high-quality crystalline strained InP nanowires are reporte...
The mechanical, optical, and electrical properties of III-V semiconductor heterostructures are inves...
This thesis describes growth, processing, characterization and photoluminescence (PL) spectroscopy o...
We have synthesized GaAs-GaxIn1-xP (0.34 < x < 0.69) core-shell nanowires by metal-organic vapor pha...
This thesis describes optical spectroscopy on III-V semiconductor nanowires. The nanowires were grow...
InP-InAs-InP multi-shell nanowires (NWs) were grown in the wurtzite (WZ) or zincblende (ZB) crystal ...
In this letter, we demonstrate that a significant improvement of optical performance of InAs nanowir...
2 páginas, 2 figuras.-- Trabajo presentado a la XIIth International Conference on Molecular Beam Epi...
We report on growth of InP-InAs core-shell nanowires and demonstration of the formation of single qu...
We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAs...
The fabrication of core-shell structures is crucial for many nanowire device concepts. For the prope...