We show experimentally that few layer graphene (FLG) grown on the carbon terminated surface (C-face) of 3C-SiC(111) is composed of decoupled graphene sheets. Landau level spectroscopy on FLG graphene is performed using the infrared optical Hall effect. We find that Landau level transitions in the FLG exhibit polarization preserving selection rules and the transition energies obey a square-root dependence on the magnetic field strength. These results show that FLG on C-face 3C-SiC(111) behave effectively as a single layer graphene with linearly dispersing bands (Dirac cones) at the graphene K point. We estimate from the Landau level spectroscopy an upper limit of the Fermi energy of about 60 meV in the FLG, which corresponds to a carrier den...
In this article, a multiscale investigation of few graphene layers grown on 6H-SiC(000-1) under ultr...
International audienceWe investigate electronic band-structure images in reciprocal space of few-lay...
Graphene layers grown on the C-face SiC exhibit quite different structural and electronic properties...
We study the origin of layer decoupling in ordered multilayer graphene grown by high temperature sub...
We study the origin of layer decoupling in ordered multilayer graphene grown by high temperature sub...
In this work, we report a multi-scale investigation using several nano-, micro and macro-scale techn...
The stacking order of multilayer graphene has a profound influence on its electronic properties. In ...
The stacking order of multilayer graphene has a profound influence on its electronic properties. In ...
Graphene was grown on the C-face of nominally on-axis SiC substrates using high-temperature sublimat...
Graphene was grown on the C-face of nominally on-axis SiC substrates using high-temperature sublimat...
Graphene was grown on the C-face of nominally on-axis SiC substrates using high-temperature sublimat...
We investigate electronic band-structure images in reciprocal space of few-layer graphene epitaxiall...
International audienceIt has been known for almost 25 years that high temperature treatment of polar...
International audienceWe investigate electronic band-structure images in reciprocal space of few-lay...
In this article, a multiscale investigation of few graphene layers grown on 6H-SiC(000-1) under ultr...
In this article, a multiscale investigation of few graphene layers grown on 6H-SiC(000-1) under ultr...
International audienceWe investigate electronic band-structure images in reciprocal space of few-lay...
Graphene layers grown on the C-face SiC exhibit quite different structural and electronic properties...
We study the origin of layer decoupling in ordered multilayer graphene grown by high temperature sub...
We study the origin of layer decoupling in ordered multilayer graphene grown by high temperature sub...
In this work, we report a multi-scale investigation using several nano-, micro and macro-scale techn...
The stacking order of multilayer graphene has a profound influence on its electronic properties. In ...
The stacking order of multilayer graphene has a profound influence on its electronic properties. In ...
Graphene was grown on the C-face of nominally on-axis SiC substrates using high-temperature sublimat...
Graphene was grown on the C-face of nominally on-axis SiC substrates using high-temperature sublimat...
Graphene was grown on the C-face of nominally on-axis SiC substrates using high-temperature sublimat...
We investigate electronic band-structure images in reciprocal space of few-layer graphene epitaxiall...
International audienceIt has been known for almost 25 years that high temperature treatment of polar...
International audienceWe investigate electronic band-structure images in reciprocal space of few-lay...
In this article, a multiscale investigation of few graphene layers grown on 6H-SiC(000-1) under ultr...
In this article, a multiscale investigation of few graphene layers grown on 6H-SiC(000-1) under ultr...
International audienceWe investigate electronic band-structure images in reciprocal space of few-lay...
Graphene layers grown on the C-face SiC exhibit quite different structural and electronic properties...