Semiconductor nanowires are great candidates for building novel electronic devices. Considering the cost of fabricating such devices, substrate reuse and gold consumption are the main concerns. Here we report on implementation of high throughput gold electrodeposition for selective deposition of metal seed particles in arrays defined by lithography for nanowire synthesis. By use of this method, a reduction in gold consumption by a factor of at least 300 was achieved, as compared to conventional thermal evaporation for the same pattern. Because this method also facilitates substrate reuse, a significantly reduced cost of the final device is expected. We investigate the morphology, crystallography, and optical properties of InP and GaAs nanow...
We have developed different electrochemical procedures for the production of gold nanowires with var...
Nanotechnology has received a lot of interest lately that will directly or indirectly benefit our d...
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...
Semiconductor nanowires are widely considered as promising candidates for next generations of electr...
Semiconductor nanowires composed of III-V materials have enormous potential to add new functionality...
Semiconductor nanowires composed of III-V materials have enormous potential to add new functionality...
Semiconducting nanowires have attracted scientific attention for more than 20 years due to their pot...
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic...
We report on a method of synthesizing arrays of individually seeded nanowires. An electron beam lith...
Semiconductor nanowires are key building blocks for the next generation of light-emitting diodes, so...
Highly controlled particle-assisted growth of semiconductor nanowires has been performed for many ye...
Gold nanowire arrays with different sizes were fabricated by electrochemical deposition in etched io...
We report on the use of a sacrificial AlAs segment to enable substrate reuse for nanowire synthesis....
The integration of III-V semiconductors with Si in device fabrication is facilitated by the use of n...
Semiconductor nanowires are studied by using transmission electron microscopy (TEM) based methods in...
We have developed different electrochemical procedures for the production of gold nanowires with var...
Nanotechnology has received a lot of interest lately that will directly or indirectly benefit our d...
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...
Semiconductor nanowires are widely considered as promising candidates for next generations of electr...
Semiconductor nanowires composed of III-V materials have enormous potential to add new functionality...
Semiconductor nanowires composed of III-V materials have enormous potential to add new functionality...
Semiconducting nanowires have attracted scientific attention for more than 20 years due to their pot...
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic...
We report on a method of synthesizing arrays of individually seeded nanowires. An electron beam lith...
Semiconductor nanowires are key building blocks for the next generation of light-emitting diodes, so...
Highly controlled particle-assisted growth of semiconductor nanowires has been performed for many ye...
Gold nanowire arrays with different sizes were fabricated by electrochemical deposition in etched io...
We report on the use of a sacrificial AlAs segment to enable substrate reuse for nanowire synthesis....
The integration of III-V semiconductors with Si in device fabrication is facilitated by the use of n...
Semiconductor nanowires are studied by using transmission electron microscopy (TEM) based methods in...
We have developed different electrochemical procedures for the production of gold nanowires with var...
Nanotechnology has received a lot of interest lately that will directly or indirectly benefit our d...
GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si) (11...